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SG50AA120 triac dimmable led driver

$4.5

≥1000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1000 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-SG50AA120

Brand: YZPST

Certification: RoHS

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Triac YZPST-SG50AA120

SG50AA120 triac dimmable led driver

TRIAC(ISOLATED TYPE)

SG50AA are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control.

● IT(AV) 50A

● High surge capability 330A

● Tab Terminals

Triac SG50AA (2) Triac SG50AA (1)

Symbol

Item

Unit

SG50AA80

SG50AA120

SG50AA160

VDRM

Repetitive Peak Off-State Voltage

800

1200

1600

Symbol	Item	Conditions	Ratings	Unit
IT(RMS)	R.M.S. On-State Current	Tc=58℃	50	A
ITSM	Surge On-State Current	One cycle, 50Hz/60Hz, peak, non-repetitive	450	A
I2t	I2t	Value for one cycle of surge current	730	A2S
PGM	Peak Gate Power Dissipation		10	W
PG(AV)	Average Gate Power Dissipation		1	W
IGM	Peak Gate Current		3	A
VGM	Peak Gate Voltage		10	V
di/dt	Critical Rate of Rise of On-State Current	IG=100mA,Tj=25℃,VD=1/2VDRM,	100	A/μs
Tj	Operating Junction Temperature		-25 to +125	℃
Tstg	Storage Temperature		-40 to +125	℃
	Mounting Torque(M4)	Recommended Value 1.0-1.4(10-14)	1.5(15)	N.m
	Mass	Typical value	2	g

Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IDRM

Reptitive Peak Off-State Current,

max

VD=VDRM, Single phase, half wave, Tj=125℃

5

mA

VTM

Peak On-State Voltage, max

On-State Current [√ 2 × IT ( RMS )], Inst.

measurement

1.4

V

I + GT1

1

Gate Trigger Current, max

Tj=25℃,IT=1A,VD=6V

80

mA

I -GT1

2

Tj=25℃,IT=1A,VD=6V

80

I + GT3

3

-

I -GT3

4

Tj=25℃,IT=1A,VD=6V

80

V+ GT1

1

Gate Trigger Voltage, max

Tj=25℃,IT=1A,VD=6V

3

V

V-GT1

2

Tj=25℃,IT=1A,VD=6V

3

V+ GT3

3

-

V-GT3

4

Tj=25℃,IT=1A,VD=6V

3

VGD

Non-Trigger Gate Voltage, min

Tj=125℃,VD=1/2VDRM

0.2

V

tgt

Turn On Time, max.

IT(RMS),IG=100mA,VD=1/2VDRM,Tj

=25℃,dIG/dt=1A/μs

10

V

dv/dt

Critical Rate of Rise on-State

Voltage,min.

Tj=125℃,VD=2/3VDRM,Exoponential wave.

300

V/μs

dv/dt]c

Critical Rate of Rise off-State

Voltage at commutation, min

Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms

200

V/μs

IH

Holding Current, typ.

Tj=25℃

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

℃/W

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