High Power Drives Thyristor Power Control 100A

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FOB,CFR,CIF

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Transportation:

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Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-TO94-KP100A06

Brand: YZPST

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Phase Control Thyristor

YZPST-TO94-KP100A06

Features of the phase control thyristor: 1. all fiffused design 2. high current capabilities 3. high surge current capabilities 4. high rates voltages 5. high DV/DT 6. low gate current 7. dynamic gate 8. low thermal impedance. The typical applications of the high power thyristor is that the module has high power drives, DC motor control, high voltage power supplies, medium power switching and DC power supplies.

Maximum Ratings And Characteristics

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
I_TAV	Mean on-state current		-	A	Sinewave,180° conduction,Tc=100°C
I_TRMS	RMS value of on-state current		100	A	Nominal value
I_TSM	Peak one cycle surge (non repetitive) current		900	A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 °C
I²t	I square t		4050	A²s	8.3 msec and 10.0 msec
I_L	Latching current		100	mA	V_D = 12 V; R_L= 12 ohms
I_H	Holding current		30	mA	V_D= 12 V; I = 1 A
V_TM	Peak on-state voltage		2.0	V	I_TM = 150 A; Duty cycle £ 0.01%; T_j = 25 °C
di/dt	Critical rate of rise of on-state current	non-repetitive	300	A/ms	Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM
di/dt	Critical rate of rise of on-state current	repetitive	50	A/ms
BLOCKING
V_DRM V_RRM	Repetitive peak off state voltage Repetitive peak reverse voltage		600	V
V_DSM V_RSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		700	V
I_DRM I_RRM	Repetitive peak off state current Repetitive peak reverse current		10	mA	T_j = 125 °C ,V_RRM V_DRMapplied
dV/dt	Critical rate of voltage rise		100	V/ms	T_J=T_Jmax, linear to 80% rated V_DRM
TRIGGEING
P_G(AV)	Average gate power dissipation		-	W
P_GM	Peak gate power dissipation		-	W
I_GM	Peak gate current		-	A
I_GT	Gate trigger current		200	mA	T_C = 25 °C
V_GT	Gate trigger voltage		3.0	V	T_C = 25 °C
V_T(T0)	Treshold voltage		1	V
r_T	Slope resistance		2.4	mΩ
V_GD	Gate non-trigger voltage		0.2	V	T_j = 125 °C
SWITCHING
t_q	Turn-off time		-	ms	T_j = 125 °C
t_d	Delay time		-	ms	Gate current 1A, di/dt=1A/μs, V_d=0.67%V_DRM, T_J=25°C
Q_rr	Reverse recovery charge		-

Thermal And Mechanical

Symbol	Parameter	Values	Units	Test Conditions
T_j	Operating temperature	-40~125	°C
T_stg	Storage temperature	-40~150	°C
R_{th (j-c)}	Thermal resistance - junction to case	0.4	°C/W	DC operation ,Single sided cooled
R_{th (c-s)}	Thermal resistance - case to sink	0.08	°C/W	Single sided cooled
P	Mounting force	-	Nm
W	Weight	-	g	about