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High short circuit capability 10us 1200V IGBT Module 450A

$115

2-99
Piece/Pieces
$82

≥100
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-450B120E53

Brand: YZPST

VCES: 1200V

IC: 450m

ICRM: 900m

VGES: ±20V

Ptot: 3000W

Supply Ability & Additional Information

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

YZPST-450B120E53

IGBT Module
Applications
Inverter for motor drive
mC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine

Fnaturns
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure

Absolute MaxMmum RatMn

Parameter

Symbol

CondMtMons

Value

UnMt

Collector-Emitter Voltage

V_CES

V_GE=0V, I_C =1mm, T_vj=25℃

1200

V

Continuous Collector Current

I_C

T_c=100℃

450

m

Peak Collector Current

I_CRM

I_CRM =2I_C

900

m

Gate-Emitter Voltage

V_GES

T_vj=25℃

±20

V

Total Power Dissipation

(IGBT-inverter)

P_tot

T_c=25℃

T_vjmax=175℃

3000

W

IGBT CharacterMstMcs

Parameter

Symbol

CondMtMons

Value

UnMt

MMn.

Typ.

Max.

Gate-emitter Threshold Voltage

V_GE(th)

V_GE=V_CE, I_C =3mm,T_vj=25℃

5.0

6.2

7.0

V

Collector-Emitter Cut-off Current

I_CES

V_CE=1200V,V_GE=0V, T_vj=25℃

1.0

mm

V_CE=1200V,V_GE=0V, T_vj=125℃

5.0

mm

Collector-Emitter Saturation Voltage

V_CE(sat)

Ic=450m,V_GE=15V, T_vj=25℃

1.85

V

Ic=450m,V_GE=15V, T_vj=125℃

2.05

V

Input Capacitance

C_ies

V_CE=25V,V_GE =0V,

f=1MHz, T_vj=25℃

31.8

nF

Output Capacitance

C_oes

2.13

nF

Reverse Transfer Capacitance

C_res

1.48

nF

Internal Gate Resistance

Rgint

0.7

Ω

Turn-on Delay Time

t_d(on)

I_C =450 m V_CE = 600 V V_GE = ±15V R_G =3.3Ω

T_vj=25℃

320

ns

Rise Time

t_r

165

ns

Turn-off Delay Time

t_d(off)

650

ns

Fall Time

t_f

124

ns

Energy Dissipation During Turn-on

Time

E_on

35

mJ

Energy Dissipation During Turn-off

Time

E_off

42

mJ

Turn-on Delay Time

t_d(on)

I_C =450m V_CE = 600 V V_GE = ±15V R_G =3.3Ω

T_vj=125℃

350

ns

Rise Time

t_r

193

ns

Turn-off Delay Time

t_d(off)

720

ns

Fall Time

t_f

156

ns

Energy Dissipation During Turn-on

Time

E_on

55

mJ

Energy Dissipation During Turn-off

Time

E_off

64

mJ

SC Data

I_sc

T_p≤10us,V_GE=15V, Tv_j=150℃,V_cc=600V,

V_CEM≤1200V

2100

m

Ÿ Package Dimensions

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Parameter	Symbol	CondMtMons	Value	UnMt
Collector-Emitter Voltage	V_CES	V_GE=0V, I_C =1mm, T_vj=25℃	1200	V
Continuous Collector Current	I_C	T_c=100℃	450	m
Peak Collector Current	I_CRM	I_CRM =2I_C	900	m
Gate-Emitter Voltage	V_GES	T_vj=25℃	±20	V
Total Power Dissipation (IGBT-inverter)	P_tot	T_c=25℃ T_vjmax=175℃	3000	W