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N-channel Enhanced mode TO-247 MOSFET

$2.1

100-999
Piece/Pieces
$1.55

≥1000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-STW20NM60

Brand: YZPST

Place Of Origin: China

VDSS: 600V

IDM: 78A

VGS: ±30A

EAS: 1284mJ

EAR: 97mJ

TSTG,TJ: -55~+150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Promising Chip YZPST-STW20NM60

N-channel Enhanced mode TO-247 MOSFET

Features

l High rugge dness

l Lo w RDS(ON) (Typ 0.22)@VGS=10V

l Low Ga te Cha rge (Typ 84nC)

l Improve d dv/dt Ca pa bility

l 100% Ava la nche Te s te d

l App lica tion:UPS , Charge, PC Power ,Inverter

General Description

This power MOSFET is produced with advanced technology of Promising Chip.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain to source voltage

600

V

ID

Continous drain current(@Tc=25℃)

20*

A

Continous drain current(@Tc=100℃)

12*

A

IDM

Drain current pulsed

78

A

VGS

Gate to source voltage

±30

V

EAS

Single pulsed avalanche energy

1284

mJ

EAR

Repetitive pulsed avalanche energy

97

mJ

dv/dt

Peak diode recovery dv/dt

5

V/ns

PD

Total power dissipation(@Tc=25℃)

42.3

W

Derating factor above 25℃

0.32

W/℃

TSTG,TJ

Operating junction temperature & storage temperature

-55~+150

℃

TL

Maximum lead temperature for soldering purpose,1/8 from case for 5second

300

℃

*Drain current is limited by junction temperature

Thermal characteristics:

Symbol

Parameter

Value

Unit

Rthjc

Thermal resistance , Junction to case

3.1

℃/W

Rthja

Thermal resistance , Junction to ambient

49

℃/W

Drawing Name

TO-247-3L (LL)

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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N-channel Enhanced mode TO-247 MOSFET

Features

General Description

Absolute maximum ratings

Thermal characteristics:

Symbol	Parameter	Value	Unit
VDSS	Drain to source voltage	600	V
ID	Continous drain current(@Tc=25℃)	20*	A
ID	Continous drain current(@Tc=100℃)	12*	A
IDM	Drain current pulsed	78	A
VGS	Gate to source voltage	±30	V
EAS	Single pulsed avalanche energy	1284	mJ
EAR	Repetitive pulsed avalanche energy	97	mJ
dv/dt	Peak diode recovery dv/dt	5	V/ns
PD	Total power dissipation(@Tc=25℃)	42.3	W
PD	Derating factor above 25℃	0.32	W/℃
TSTG,TJ	Operating junction temperature & storage temperature	-55~+150	℃
TL	Maximum lead temperature for soldering purpose,1/8 from case for 5second	300	℃