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BT151 SCRs series is suitable to fit all modes of control T0-220F

$0.1

5000-49999
Piece/Pieces
$0.08

≥50000
Piece/Pieces

option:

IT(RMS):12A
ITSM:100A
VDRM:650V
VRRM:650V
IGT:15mA
Tstg:-40 ~150℃
Tj:-40~125℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BT151X-650R

Brand: YZPST

Place Of Origin: China

IT(RMS): 12A

VDRM: 650V

VRRM: 650V

IGT: 15mA

Tstg: -40 ~150℃

Tj: -40~125℃

ITSM: 100A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

BT151 Series 12A SCRs

YZPST-BT151X-650R

BT151 SCRs series is suitable to fit all modes of control T0-220F

DESCRIPTION:

Glasspassivated thyristors in aplastic envelope, The BT151 SCRs series is suitable to fit all modes of control,found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits

YZPST-BT151X-650R

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	12	A
VDRM VRRM	650	V
IGT	15	mA

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~ 150	℃
Operating junction temperature range	Tj	-40~ 125	℃
Repetitive peak off-state voltage (T =25℃)	VDRM	650	V
Repetitive peak reverse voltage (T =25℃)	VRRM	650	V
RMS on-state current (T = 105℃)	IT(RMS)	12	A
Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz)	ITSM	100	A
Average on-state current ( 180° conduction angle)	IT(AV)	8	A
I2t value for fusing (tp= 10ms)	I2t	45	A2S
Critical rate of rise of on-state current (I =2 ×IGT, tr ≤ 100 ns)	di/dt	50	A/μS
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol	Test Condition		Value	Unit
IGT	V = 12V R = 140Ω	MAX.	15	mA
VGT	V = 12V R = 140Ω	MAX.	1.3	V
VGD	VD=VDRM Tj=125℃ R= 1KΩ	MIN.	0.2	V
IL	IG= 1.2IGT	MAX.	50	mA
IH	IT=50mA	MAX.	30	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	MIN.	400	V/μs

STATIC CHARACTERISTICS

Symbol	Parameter		Value（MAX.）	Unit
VTM	ITM =23A tp=380μs	Tj =25℃	1.6	V
IDRM	VD=VDRM VR=VRRM	Tj =25℃	5	μA
IRRM	VD=VDRM VR=VRRM	Tj =125℃	2	mA

Thermal Resistances

Symbol Parameter Value Unit

TO-220M1 60

Rth(j-a) junction to ambient TO-220FW 50

TO-252 70

TO-220M1 1.5 ℃/W

Rth(j-c) Junction to case TO-220FW 4.5

TO-252 2

TO-220FW Package Mechanical Data

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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