Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current
  • BT136 Series 4A Triac with low holding and latching current

BT136 Series 4A Triac with low holding and latching current

  • $0.08
    6000-19999
    Piece/Pieces
  • $0.06
    ≥20000
    Piece/Pieces
Share:
Chat Now
  • Product Description
Overview
Product Attributes

Model No.YZPST-BT136

BrandYZPST

Place Of OriginChina

IT(RMS)4A

VDRM/VRRM600/800V

VTM≤1.7V

Tstg-40~150℃

Tj-40~125℃

ITSM25A

I2t3.1A2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationLand,Ocean,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N: YZPST-BT136 Series 4A Triacs
DESCRIPTION:

With low holding and latching current, BT136 Series triacs are especially recommended for    use on middle and small resistance type power load.

YZPST-BT136 TO-220


MAIN FEATURES:

symbol

value

unit

IT(RMS)

4

A

VDRM/VRRM

600/800

V

VTM

≤1.7

V

ABSOLUTE MAXIMUM RATINGS:

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40~150
Operating junction temperature range Tj -40~125
Repetitive peak off-state voltage (Tj=25) VDRM 600/800 V
Repetitive peak reverse voltage (Tj=25) VRRM 600/800 V
RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current
(full cycle, F=50Hz) ITSM 25 A
I2t value for fusing (tp=10ms) I2t 3.1 A2s
Critical rate of rise of on-state current (IG=2 × IGT) - - 50
dI/dt 10 A/ μs
Peak gate current IGM 2 A
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

Parameter Value
Test Condition Quadrant T D E Unit
Ⅰ- Ⅱ-Ⅲ 5 5 10
IGT VD=12V, 5 10 25 mA
VGT RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 5 10 20 mA
Ⅰ-Ⅲ-Ⅳ 8 10 20
IL IG=1.2IGT MAX 12 15 35 mA
VD=0.66×VDRM   Tj=125 Gate open
dV/dt MIN 10 20 50 V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=5A   tp=380μs Tj=25 MAX 1.7 V
IDRM Tj=25 5 µA
IRRM VDRM= VRRM Tj= 125 MAX 0.5 mA


THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-252-4R 2.8
Rth(j-c) junction to case(AC) TO-220B(Non-Ins)/ TO-220C 2.6 /W

PACKAGE MECHANICAL DATA

TO-220B

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

Download
Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > BT136 Series 4A Triac with low holding and latching current
Email to this supplier
  • *Subject:
  • *To:
    Mr. John chang
  • *Email:
  • *Message:
    Your message must be between 20-8000 characters
Send Inquiry
*
*

Related Products List

Home

Product

Whatsapp

About Us

Inquiry

苏ICP备05018286号-1
We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Send