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High surge capability 400A TG-C package triac TG25C60

$5

100-999
Piece/Pieces
$2.9

≥1000
Piece/Pieces

option:

IT RMS:25A
ITSM:300/330A
I2t:450A2S
PGM:10W
PGAV:1W
IGM:3A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA25-600BW TG25C60

Brand: YZPST

Place Of Origin: China

IT RMS: 25A

ITSM: 300/330A

I2t: 450A2S

PGM: 10W

PGAV: 1W

IGM: 3A

VGM: 10V

Di/dt: 50A/μS

Supply Ability & Additional Information

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Picture Example:

YZPST-TG25..SERIES

YZPST-BTA25-600BW TG25C60

TRIAC (ISOLATED TYPE)

TG25C/E/D are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch,
motor control, light control and heater control.
IT AV 25A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals

Maximum Ratings

Symbol	Item	Conditions	Ratings	Unit
IT RMS	R.M.S. On-State Current	Tc	25	A
ITSM	Surge On-State Current	One cycle, 50Hz/60Hz, peak, non-repetitive	300/330	A
I2t	I2t	Value for one cycle of surge current	450	A2S
PGM	Peak Gate Power Dissipation		10	W
PGAV	Average Gate Power Dissipation		1	W
IGM	Peak Gate Current		3	A
VGM	Peak Gate Voltage		10	V
di/dt	Critical Rate of Rise of On-State Current	IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS	50	A/μS
Tj	Operating Junction Temperature		-25～+125	℃
Tstg	Storage Temperature		-40～+125	℃
VISO	Isolation Breakdown Voltage R.M.S.	A.C. 1 minute	2500	V
	Mounting Torque M4	Recommended Value 1.0 ～1.4（10～14）	14	kgf.CM

Maximum Ratings

Tj=25 unless otherwise specified

Symbol Item Ratings Unit

TG25C60 TG25C80 TG25C100 TG25C12 V

VDRM Repetitive Peak Off-State Voltage 400 800 1000 1200 V

Electrical Characteristics

Symbol		Item	Conditions	Ratings	Unit
IDRM		Reptitive Peak Off-State Current, max	VD=VDRM, Single phase, half wave, Tj=125℃	5	mA
VTM		Peak On-State Voltage, max	On-State Current On-State Current √2X IT (RMS),Inst. measurement	1.4	V
I GT1 +	1	Gate Trigger Current, max	Tj =25℃, IT=1A, VD=6V	50	mA
I GT1 -	2		Tj =25℃, IT=1A, VD=6V	50	mA
I GT3 +	3			-	mA
I GT3 +	4		Tj =25℃, IT=1A, VD=6V	50	mA
V GT1+	1	Gate Trigger Voltage, max	Tj =25℃, IT=1A, VD=6V	3	V
V GT1-	2		Tj =25℃, IT=1A, VD=6V	3	V
V GT3+	3			-	V
V GT3-	4		Tj =25℃, IT=1A, VD=6V	3
VGD		Non-Trigger Gate Voltage, min	Tj =25℃, VD= 1/2VRRM	0.2	V
tgt		Turn On Time, max.	IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS	10	V
dv/dt		Critical Rate of Rise on-State Voltage,min.	Tj=25℃,VD=2/3VDRM Exoponential wave.	20	V/μS
(dv/dt) c		Critical Rate of Rise off-State Voltage at commutation, min	Tj=25℃,VD=2/3VDRM di/dtc=15A/μS	5	V/μS
IH		Holding Current, typ.	Tj =25℃	30	mA
Rth(j-c)		Thermal Impedance, max	Junction to case	1.5	℃/W