Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High commutation performances 600V BTA212X-600D 12A Triac
  • High commutation performances 600V BTA212X-600D 12A Triac
  • High commutation performances 600V BTA212X-600D 12A Triac
  • High commutation performances 600V BTA212X-600D 12A Triac
  • High commutation performances 600V BTA212X-600D 12A Triac
  • High commutation performances 600V BTA212X-600D 12A Triac

High commutation performances 600V BTA212X-600D 12A Triac

  • $0.12
    5000-49999
    Piece/Pieces
  • $0.1
    ≥50000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA212X-600D

BrandYZPST

Place Of OriginChina

IT(RMS)12A

VDRM600V

VRRM600V

VTM≤1.5V

Tstg-40~150℃

Tj-40~125℃

ITSM120A

I2t78A2s

DI/dt50A/ μs

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Air,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA212 12A Triacs

YZPST-BTA212X-600D 

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA212 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, It provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTA212X-600D TO-220

MAIN FEATURES:

symbol

value

unit

IT(RMS)

12

A

VDRM/VRRM

600/800/1200

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800/1200

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800/1200

V

RMS on-state current

IT(RMS)

12

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

 

ITSM

 

120

 

A

I2t value for fusing (tp=10ms)

I2t

78

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 mA
VGT RL=33Ω - - MAX 1.5 V
VGD VD=VDRM - - MIN 0.2 V
IH IT=100mA MAX 5 10 40 60 mA
- 20 30 50 70
IL IG=1.2IGT MAX 25 40 60 80 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 100 200 500 1000 V/ µs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 mA
IGT VD=12V, 50 70 mA
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 40 60 mA
--  50 70
IL IG=1.2IGT MAX 70 90 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 200 500 V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=17A   tp=380μs Tj=25 MAX 1.5 V
IDRM Tj=25 5 µA
IRRM VDRM= VRRM Tj= 125 MAX 1 mA

THERMAL RESISTANCES

Symbol Test Condition Value Unit
TO-220A(Ins 2.3
TO-220B(Non-Ins 1.5
TO-220F(Ins 2.5 /W
Rth(j-c) junction to case(AC) TO-263 1.5

PACKAGE MECHANICAL DATA

Yzpst Bta212x 600d To 220f Jpg


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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