Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-220M2 T1650H-6I 16A Triac operate in high powerdensity
  • TO-220M2 T1650H-6I 16A Triac operate in high powerdensity
  • TO-220M2 T1650H-6I 16A Triac operate in high powerdensity
  • TO-220M2 T1650H-6I 16A Triac operate in high powerdensity
  • TO-220M2 T1650H-6I 16A Triac operate in high powerdensity
  • TO-220M2 T1650H-6I 16A Triac operate in high powerdensity

TO-220M2 T1650H-6I 16A Triac operate in high powerdensity

  • $0.21
    3000-29999
    Piece/Pieces
  • $0.17
    ≥30000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-T1650H-6I

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM600V

IGT50mA

Tstg-40 ~150℃

Tj-40~125℃

ITSM160A

I2t169A2S

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Air,Others,Express

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
T1650H-6I 16A TRIACs
DESCRIPTION:
Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 16A triacs provide a very high switching capability up to junction temperatures of 150° C.

The heatsink can be reduced, compared to traditional triacs, according to the high performance at given junction temperatures

TO-220M2

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

16

A

VDRM VRRM

600

V

IGT

50

mA

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (T =25℃)

VDRM

600

V

Repetitive peak reverse voltage (T =25℃)

VRRM

600

V

RMS on-state current

IT(RMS)

16

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

160

A

I2t value for fusing (tp=10ms)

I2t

169

A2S

Critical rate of rise of on-state current

(I =2×IGT)

dI/dt

50

A/μS

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

ELECTRICAL CHARACTERISTICS (T=25unless otherwise specified)

Symbol Value
Test Condition Quadrant T1635 T1650 Unit
IGT    MAX. 35 50 mA
VGT V =12V R =33Ω    MAX. 1.3 V
VGD VD=VDRM Tj=125℃ R=3.3KΩ    MIN. 0.2 V
IL IG=1.2IGT ⅠⅡ  MAX. 80 110 mA
IH IT=100mA MAX. 50 75 mA
dV/dt VD=2/3VDRM Gate Open Tj=125℃ MIN. 1000 1500 V/μs

STATIC CHARACTERISTICS

Symbol Parameter Value Unit
VTM ITM =23A tp=380μs Tj =25℃ 1.55 V
IDRM VD=VDRM VR=VRRM Tj =25℃ 5 μA
IRRM Tj =125℃ 5.5 mA

Thermal Resistances

Symbol Parameter Value Unit
Rth(j-a) junction to ambient 60
Rth(j-c) Junction to case(AC) 2.1 /W

TO-220M2 Package Mechanical Data

YZPST-T1650H-6I TO-220M2



Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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