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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Back side of multi-layer metal TO-92 MAC97A8 Triac
Back side of multi-layer metal TO-92 MAC97A8 Triac
  • Back side of multi-layer metal TO-92 MAC97A8 Triac
  • Back side of multi-layer metal TO-92 MAC97A8 Triac
  • Back side of multi-layer metal TO-92 MAC97A8 Triac
  • Back side of multi-layer metal TO-92 MAC97A8 Triac

Back side of multi-layer metal TO-92 MAC97A8 Triac

  • $41
    200-1999
    Others
  • $36
    ≥2000
    Others
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Overview
Product Attributes

Model No.: YZPST-MAC97A8

Brand: YZPST

Place Of Origin: China

IT(RMS): 0.8A

VDRM: 600V

VRRM: 600V

ITSM: 8.0A

I2t: 0.45A2S

IGM: 1A

PGM: 1W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
1000 pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N:YZPST-MAC97A6 97A8 Triacs
Feature
Silicon triacs devices as sensitive design
P type through diffusion isolated
Mesa glass-passivated technology
Backside of multi-layer metal
Typical application
Heating controller; dimming controller

Lamp control; Home Appliances

Package
TO-92 SOT-89
YZPST-MAC97A8 TO-92


Main Specification (Tj=25℃）

Type Content Value Unit
IT(RMS) Nominal RMS on-state Current 0.8 A
Off-state/reverse repetitive peak voltage MAC97A6 400 V
VDRM/VRRM
MAC97A8 600 V
ITSM Non-repetitive on-state surge current 8 A
Limited Specification
Type Specification and conditions value units
IT(RMS) Nominal RMS on-state Current Tlead ≤50℃ 0.8 A
Repetitive peak off-state 400 V
voltage    Tj=25℃ MAC97A6
VDRM/VRRM Repetitive peak reverse 600 V
voltage    Tj=25℃ MAC97A8
ITSM Non-repetitive  on-state  surge  current  sine  50HZ,one  cycle TC=25℃ 9 A
I2t Fuse current     (tp=10ms) 0.45 A2S
IGM Gate peak current 1 A
PGM Gate peak power 1 W

PG(AV)

 

Gate average power

 

0.1

 

W

 

 

di/dt

 

Critical rate of rise of on state voltage

(ITM=1 A,,IG=0.2A, d IG  /dt=0.2A/μS , Tj=110℃ )

 

 

20

 

 

A/μS

Tstg

Tj

Storage temperature

Junction temperature

-40--+150

-40--+110

 

℃


TO-92 package drawing：

YZPST-MAC97A8


YZPST-MAC97A8 TO92

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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