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TO-92 Standard 1A Triacs suitable for general purpose AC switching applications

  • $0.03
    3000-29999
    Piece/Pieces
  • $0.02
    ≥30000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-Z0103MA

BrandYZPST

Place Of OriginChina

IT(RMS)1A

I²t0.35A² s

DI/dt20A/µs

IGM1A

PG(AV)1W

Tstg- 40 to + 150℃

Tj- 40 to + 125℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

Standard 1A Triacs P/N:YZPST-Z0103MN0

Features
On-state rms current, IT(RMS) 1 A
Repetitive peak off-state voltage, V DRM/VRRM 800 V
Triggering gate current, IGT (Q1) 3 to 25 mA
Description
The Z01 series is suitable for general purpose AC switching applications. These devices are
typically used in applications such as home
appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performance when driven
directly through microcontrollers.
YZPST-Z0103MN
Table 1.       Absolute maximum ratings
Symbol Parameter Value Unit
  On-state rms current SOT-223 tab = 90 °C    
IT(RMS) (full sine wave) TO-92 T= 50 °C 1 A
    SMBflat-3L tab = 107 °C    
ITSM Non repetitive surge peak on-state   current  (full cycle, Tinitial = 25 °C) F = 50 Hz t = 20 ms 8 A
F = 60 Hz t = 16.7 ms 8.5
I²t I²t Value for fusing t= 10 ms 0.35 ²
A s
dI/dt Critical rate of rise of on-state current I= 2 x I GT  , t≤ 100 ns F = 120 Hz T= 125 °C 20 A/µs
IGM Peak gate current t= 20 µs T= 125 °C 1 A
PG(AV) Average gate power dissipation T= 125 °C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
Tj Operating junction temperature range - 40 to + 125

 

Table 2.       Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol       Z01  
Test conditions Quadrant 3 7 9 10 Unit
GT (1) V= 12 V, I - II - III MAX. 3 5 10 25 mA
R= 30 Ω IV 5 7 10 25
VGT   ALL MAX. 1.3 V
  V= VDRM,        
VGD R= 3.3 kΩ, ALL MIN. 0.2 V
  T= 125 °C        
I(2) I= 50 mA MAX. 7 10 10 25 mA
IL I= 1.2 I GT I - III - IV MAX. 7 10 15 25 mA
II 15 20 25 50
dV/dt (2) V=  67% V DRM   gate open T= 110 °C MIN. 10 20 50 100 V/µs
(dV/dt)c (dI/dt)= 0.44 A/ms, MIN. 0.5 1 2 5 V/µs
-2 T= 110 °C

1.   Minimum I GT is guaranteed at 5% of IGT max.

2.   For both polarities of A2 referenced to A1.

Table 3.       Static characteristics

Symbol Test conditions Value Unit
VTM(1) ITM = 1.4 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V
V to (1) Threshold voltage Tj = 125 °C MAX. 0.95 V
R(1) Dynamic resistance Tj = 125 °C MAX. 400 mΩ
I DRM V DRM = VRRM Tj = 25 °C MAX. 5 µA
IRRM Tj = 125 °C 0.5 mA

1.   For both polarities of A2 referenced to A1.

Table 4.       Thermal resistances

Symbol Parameter Value Unit
Rth(j-t) Junction to tab (AC) SOT-223   25  
Rth(j-t) Junction to tab (AC) SMBflat-3L   14  
Rth(j-I) Junction to lead (AC) TO-92   60  
    S(1) = 5 cm² SOT-223 MAX. 60 °C/W
Rth(j-a) Junction to ambient SMBflat-3L   75  
      TO-92   150  

1.   S = copper surface under tab.



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