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Low holding and latching current TO-252 600V BT136S-600 4A triac

$0.08

1000-9999
Piece/Pieces
$0.06

≥10000
Piece/Pieces

option:

IT(RMS):4A
VDRM:600V
VRRM:600V
VTM:1.7V
ITSM:25A
I2t:3.1A2s

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BT136S-600

Brand: YZPST

Place Of Origin: China

IT(RMS): 4A

VDRM: 600V

VRRM: 600V

VTM: 1.7V

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 25A

I2t: 3.1A2s

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 10000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-BT136 Series 4A Triacs

YZPST-BT136S-600

DESCRIPTION:

With low holding and latching current, BT136 Series triacs are especially recommended for use on middle and small resistance type power load.

YZPST-BT136 TO-220

MAIN FEATURES:

symbol	value	unit
IT(RMS)	4	A
VDRM/VRRM	600/800	V
VTM	≤1.7	V

ABSOLUTE MAXIMUM RATINGS:

Parameter		Symbol	Value	Unit
Storage junction temperature range		Tstg	-40~150	℃
Operating junction temperature range		Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)		VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)		VRRM	600/800	V
RMS on-state current		IT(RMS)	4	A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)		ITSM	25	A
I2t value for fusing (tp=10ms)		I2t	3.1	A2s
Critical rate of rise of on-state current (IG=2 × IGT)		Ⅰ- Ⅱ-Ⅲ	50
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	Ⅳ	10	A/ μs

Peak gate current	IGM	2	A
Average gate power dissipation	PG(AV)	0.5	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter				Value
Parameter	Test Condition	Quadrant		T	D	E	Unit
		Ⅰ- Ⅱ-Ⅲ		5	5	10
IGT	VD=12V,	Ⅳ		5	10	25	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MAX	1.3			V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MIN	0.2			V
IH	IT=100mA		MAX	5	10	20	mA
		Ⅰ-Ⅲ-Ⅳ		8	10	20
IL	IG=1.2IGT	Ⅱ	MAX	12	15	35	mA
	VD=0.66×VDRM Tj=125℃ Gate open
dV/dt	VD=0.66×VDRM Tj=125℃ Gate open		MIN	10	20	50	V/ µs