Home > Products > Semiconductor Module Devices > Diode Module > Low power loss MK5050 schottky bypass diode module for PV
  • Low power loss MK5050 schottky bypass diode module for PV
  • Low power loss MK5050 schottky bypass diode module for PV
  • Low power loss MK5050 schottky bypass diode module for PV
  • Low power loss MK5050 schottky bypass diode module for PV
  • Low power loss MK5050 schottky bypass diode module for PV

Low power loss MK5050 schottky bypass diode module for PV

  • $0.39
    2000-9999
    Piece/Pieces
  • $0.35
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-MK5050

BrandYZPST

Place Of OriginChina

VRRM50V

VRMS35V

VDC50V

I(AV)50A

IFSM400A

TOP-55~+150℃

TJ≤ 200℃

Tstg-55~+150℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Air

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
Bypass Diode Module For PV
P/N: YZPST-MK5050
REVERSE VOLTAGE:50 V
FORWARD CURRENT:50 A
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low IR
High surge capacity
High temperature reverse characteristic is excellent For use in photovoltaic solar cell protection
MECHANICAL DATA
Case: Molded plastic, MT09E
Epoxy: UL 94V-O rate flame retardant
Polarity: As marked
Mounting position: Any

Marking: MK5050  

YZPST-MK5050

Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols MK5050 Units
Maximum Recurrent Peak Reverse Voltage VRRM 50 V
Maximum RMS Voltage VRMS 35 V
Maximum DC Blocking Voltage VDC 50 V
Maximum Average Forward Rectified Current at TC = 125°C I(AV) 50 A
Peak Forward Surge Current,
8.3ms single half-sine-wave IFSM 400 A
superimposed on rated load (JEDEC method)
Maximum Forward at IF  = s0A, TC  = 25°C at IF  = s0A, TC  =125°C VF 0.55 V
Voltage (Note 1) 0.47
Maximum Reverse Current at TJ=25 IR 0.5 mA
at Rated DC Blocking Voltage TJ=100 500
Typical Thermal Resistance RθJC 1.2 /W
Operating Junction Temperature Range TOP -55 to +150
Junction Temperature in DC Forward Current Without Reverse Bias. T  1 hour (Note 3) TJ  200
Storage Temperature Range Tstg -55 to +150

NOTES:

1- 300us Pulse Width, 2%Duty Cycle.

2- Thermal Resistance Junction to Case. Without Heatsink.

3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test.



Product Categories : Semiconductor Module Devices > Diode Module

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