Home > Products > Semiconductor Module Devices > IGBT Module > 62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Contact Supplier

Mr. John chang

Leave a message

Contact Now

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Name: YZPST-P150HFN120AT1R6
Uploaded: 2024-07-01T12:27:01+08:00
Description: YZPST-P150HFN120AT1R6

$45

50-499
Piece/Pieces
$38

≥500
Piece/Pieces

option:

VcEs：1200V
VGEs：±20V
lc：150A
CRM：300A
Ptot：1500W
VcE(sat：2.2V

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-P150HFN120AT1R6

Brand: YZPST

Place Of Origin: China

VcEs: 1200V

VGEs: ±20V

Lc: 150A

CRM: 300A

Ptot: 1500W

VcE(sat: 2.2V

VgE(th: 2.5V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CIF,CFR

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■ Low Switching Losses

■ LoW VcEsal

■ Low VcE(sat with Positive Temperature Coefficient

Applications

■ Motor Drives

UPS Systems

■ High Power Inverter

Equivalent Circuit Schematic

IGBT -Inverter

Maximum Rated Values

Symbol	Description	Conditions	Values	Unit
VcEs	Collector-Emitter Voltage	Tv=25℃	1200	V
VGEs	Gate-Emitter Peak Voltage	Ty=25℃	±20	V
lc	Continuous DC Collector Current	Tc=100℃	150	A
CRM	Repetitive Peak Collector Current	tp=1ms	300	A
Ptot	Total Power Dissipation	Tc=25℃,Tyjmax=175℃	1500	W

Characteristic Values

Symbol			Values
Symbol	Description	Conditions	Min.	Typ.	Max.	Unit
VcE(sat	Collector-Emitter Saturation Voltage	VcE=15V,Ic=150A,Tv=25℃		2.2		V
VcE(sat	Collector-Emitter Saturation Voltage	Vge=15V,Ic=150A,Tv=125℃		2.5		V
VgE(th	Gate Threshold Voltage	VgE=VcE,Ic=3.8mA	5	5.8	6.5	V
IcEs	Collector-Emitter Cut-Off Current	VcE=1200V,VgE=0V				mA
GES	Gate-Emitter Leakage Current	VcE=20V,VcE=0V			600	nA
RGint	Internal Gate Resistor	Ty=25℃		3.8		Ω
Cies	Input Capacitance			11.5		nF
Coes	Output Capacitance	Vce=25V,Vce=0V,f=1MHz		1		nF
Cres	Reverse Transfer Capacitance			0.4		nF
tt(on)	Turn-on Delay Time			139		ns
tt(on)	Turn-on Delay Time	Vcc=600V		139		ns
t	Turn-on Rise Time	VoE=±15V		37		nS
d(a)	Turn-off Delay Time	Ic=150A		192		nS
t	Turn-off Fall Time	Rg=2.0g		128		nS
Eon	Turn-on Switching Loss	Inductive Load		7.9	-=	mJ
E₀ff	Turn-off Switching Loss	Ty=25℃		8.4		mJ
Isc	Short Circuit Data	VcE≤15V,Vcc=600V		518		A
Isc	Short Circuit Data	tp≤10μs,Tv=25℃		518		A
	Thermal Resistance,Junction to Case	Per IGBT	—--	0.1	—--	K/W
Twop	Virtual Junction Temperature	Under Switching	-40		150	℃

Diode -Inverter

Maximum Rated Values

Symbol	Description	Conditions	Values	Unit
VRRM	Repetitive Peak Reverse Voltage	Tv=25℃	1200	V
lF	Continuous DC Forward Current		150	A
lFRM	Repetitive Peak Collector Current	tp=1ms	300	A

Characteristic Values

Symbol Values

Description Conditions Min. Typ Max. Unit

Forward Voltage lr=150A,Vse=0V,Tv=25℃ 2.5 V

VF l=150A,Vge=0V,Tv=125℃ 1.9 —-- V

RM Peak Reverse Recovery Current —-- 42 A

Qr Recovered Charge l=150A,Vg=600V,Vge=-15V 3.1 uC

Erec Reverse Recovery Energy Ty=25℃ 1.1 mJ

Tuop Virtual Junction Temperature Under Switching -40 150 ℃

Package Outlines(mm)

Product Categories : Semiconductor Module Devices > IGBT Module

Download