Home > Products > Semiconductor Module Devices > IGBT Module > FF600R17ME4 600B170E53 1700V IGBT Power Module
  • FF600R17ME4 600B170E53 1700V IGBT Power Module
  • FF600R17ME4 600B170E53 1700V IGBT Power Module
  • FF600R17ME4 600B170E53 1700V IGBT Power Module
  • FF600R17ME4 600B170E53 1700V IGBT Power Module
  • FF600R17ME4 600B170E53 1700V IGBT Power Module

FF600R17ME4 600B170E53 1700V IGBT Power Module

  • $151
    10-19
    Piece/Pieces
  • $121
    ≥20
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FF600R17ME4 (600B170E53)

BrandYZPST

Place Of OriginChina

VCES1700V

IC600A

ICRM1200A

VGES±20V

Ptot4286W

ICES1.0mA

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Air,Express

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
P/N:YZPST-600B170E53 (YZPST-FF600R17ME4)
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ IGBT technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175℃
FF600R17ME4 IGBT

Absolute Maximum Ratings

 

 

Parameter

 

Symbol

 

Conditions

 

Value

 

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

1700

V

Continuous Collector Current

IC

Tc=100

600

A

Peak Collector Current

ICRM

ICRM =2IC

1200

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation (IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

4286

W

 

IGBT Characteristics

 

Parameter     Value Unit
Symbol Conditions Min. Typ. Max.  
Gate-emitter Threshold Voltage VGE(th) VGE=VCE,  IC =24mA,Tvj=25 5.4 6.2 7.4 V
Collector-Emitter Cut-off Current ICES VCE=1700V,VGE=0V, Tvj=25     1 mA
    Ic=600A,VGE=15V, Tvj=25   2.4 2.75 V
    Ic=600A,VGE=15V, Tvj=125   2.8   V
Collector-Emitter   Saturation Voltage VCE(sat) Ic=600A,VGE=15V, Tvj=150   2.9   V
Input Capacitance Cies     40   nF
Output Capacitance Coes     2.09   nF
Reverse Transfer Capacitance Cres VCE=25V,VGE =0V, f=1MHz, Tvj=25   1.44   nF
Turn-on Delay Time td(on)     180   ns
Rise Time tr     100   ns
Turn-off Delay Time td(off)     300   ns
Fall Time tf IC =600 A   100   ns
Energy Dissipation During Turn-on Time Eon VCE = 900 V VGE = ±15V  RG = 1.0Ω   Tvj=25   150   mJ
Energy Dissipation During Turn-off Time Eoff     100   mJ
Turn-on Delay Time td(on)     190   ns
Rise Time tr     110   ns
Turn-off Delay Time td(off)     350   ns
Fall Time tf IC =600 A   150   ns
Energy Dissipation During Turn-on Time Eon VCE = 900 V VGE = ±15V  RG = 1.0Ω   Tvj=125   225   mJ
Energy Dissipation During Turn-off Time Eoff     160   mJ

 

Package Dimensions

FF600R17ME4 Package Dimensions

Product Categories : Semiconductor Module Devices > IGBT Module

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