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PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle

$38

10-49
Piece/Pieces
$31

≥50
Piece/Pieces

option:

VCES:1200V
VGES:±20V
Ic:35A
CRM:70A
Ptot:172W
VcE(sat):2.15V

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-P035PJE120AT1B

Brand: YZPST

Place Of Origin: China

VCES: 1200V

VGES: ±20V

IC: 35A

CRM: 70A

Ptot: 172W

VcE(sat): 2.15V

VgE(th: 5.6V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Air

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

PIM with Trench Field-Stop lGBT, Emitter Controlled Diode and NTC

YZPST-P035PJE120AT1B

Features

Trench+Field Stop Technology

1200V Trench Field-Stop IGBT

LowVCE(sat)with Low Switching Losses

Applications

Frequency Coverters

Motor Drives

Auxiliary Inverters

Equivalent Circuit Schematic

IGBT-Inverter

Maximum Rated Values

Symbo	Description	Conditions	Values	Unit
VCES	Collector-Emitter Voltage	Ty=25℃	1200	V
VGEs	Gate-Emitter Peak Voltage	Ty=25℃	±20	V
Ic	Continuous DC Collector Current	Tc=100℃	35	A
CRM	Repetitive Peak Collector Current	tp=1ms	70	A
Ptot	Total Power Dissipation	Tc=25℃,Tyimax=175℃	172	W

Characteristic Values

Symbo	Description	Conditions	Values			Unit
Symbo	Description	Conditions	Min	Typ.	Max.	Unit
VcE(sat)	Collector-Emitter Saturation Voltage	VGE=15V,Ic=35A,Ty=25℃		2.15		V
VcE(sat)	Collector-Emitter Saturation Voltage	VGE=15V,Ic=35A,Tv=125℃		2.57		V
VgE(th	Gate Threshold Voltage	VGE=VcE,c=1.2mA		5.6		V
CES	Collector-Emitter Cut-Off Current	VcE=1200V,VGE=0V			1	mA
GES	Gate-Emitter Leakage Current	VGE=20V,VcE=0V			100	nA
Cies	Input Capacitance	VcE=25V,VGE=OV,f=1MHz		2590		pF
Coes	Output Capacitance			180		pF
Cres	Reverse Transfer Capacitance			86		pF
td(on)	Turn-on Delay Time	VcE=600V VGF=±15V Ic=35A Rg=120 Inductive Load Ty=25℃		34		ns
t	Turn-on Rise Time			20		ns
td(off)	Turn-off Delay Time			230		ns
t	Turn-off Fall Time			160		ns
Eon	Turn-on Switching Loss			2.5		mJ
Eoff	Turn-off Switching Loss			2.5		mJ
lsc	Short Circuit Data	VGE≤15V,Vcc=800V tp≤10μs,Tv=150℃		151		A
RthJC	Thermal Resistance,Junction to Case	Per IGBT			0.87	K/W
Tw OF	Virtual JunctionTemperature	Under Switching	-40		150	℃