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3000V Fast KK thyristors KK1000A

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Incoterm:

FOB,CFR,CIF

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Transportation:

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Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-63H200

Brand: YZPST

Type: Intrinsic Semiconductor

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Fast thyristors

YZPST-63H200

ELECTRICAL CHARACTERISTICS AND RATINGS

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 F capacitor and 20 ohms

resistance in parallel with the thristor under

test.

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

3000

3000

3100

       V_RRM = Repetitive peak reverse voltage

       V_DRM = Repetitive peak off state voltage

       V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		1000		A	Sinewave,180^o conduction,T_sink=55^oC
RMS value of on-state current	I_TRMS		1700		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		15.9		KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.26x10⁶		A²s	10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.42		V	I_TM =2000 A; T_j = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		150		A/ms	Switching from V_DRM £ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 300 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.6	0.8	ms	I_TM =500 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	120	ms	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		-	-	mC	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - case to heatsink	R_Q_(c-s)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - junction to heatsink	R_Q_(j-s)		0.022 0.044		K/W	Double sided cooled Single sided cooled
Mounting force	P	19	26		kN
Weight	W			510	g	about