Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > High dV/dt capability 6500V high power thyristor

Contact Supplier

Mr. John chang

Leave a message

Contact Now

High dV/dt capability 6500V high power thyristor

$150

1-99
Piece/Pieces
$95

≥100
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-KP894A-6500V

Brand: YZPST

VRRM: 6500V

VRSM: 894A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

YZPST-KP894A-6500V



Product Description

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration v

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

6500

6500

6600

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 ^oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range -40 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential waveshape to 80% rated V_DRM. Gate open. Tj = 125 ^oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Notes:

All ratings are specified for Tj=25 ^oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range -40 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential waveshape to 80% rated V_DRM. Gate open. Tj = 125 ^oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 mF capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

I_T(AV)_M

894

A

Sinewave,180^o conduction,T_c=60^oC

RMS value of on-state current

I_T₍_RMS_)m

1404

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

-



12

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

0.72x10⁶

A²s

8.3 msec

Latching current

I_L

3000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

300

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.4

V

I_TM = 1000 A ,T_j = 25 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from V_DRM £ 1000 V

Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1

Product Categories : Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor

Hot Products

Home > Products > Semiconductor Disc Devices(Capsule Type) > Inverter Thyristor > High dV/dt capability 6500V high power thyristor

Email to this supplier

*Subject:
*To:

Mr. John chang
*Email:
*Message:

Your message must be between 20-8000 characters

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. average value of on-state current	I_T(AV)_M		894		A	Sinewave,180^o conduction,T_c=60^oC
RMS value of on-state current	I_T₍_RMS_)m		1404		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 12		kA kA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		0.72x10⁶		A²s	8.3 msec
Latching current	I_L		3000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		300		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		2.4		V	I_TM = 1000 A ,T_j = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		200		A/ms	Switching from V_DRM £ 1000 V