Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High Power Thyristors 1718A CE 1800V

Contact Supplier

Mr. John chang

Leave a message

Contact Now

High Power Thyristors 1718A CE 1800V

Get Latest Price

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

Transportation:

Ocean,Air

Port:

Shanghai

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information

< >

Overview

Product Attributes

Model No.: YZPST-N1718NS180

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

HIGH POWER THYRISTOR FOR PHASE CONTROL

YZPST-N1718NS18

Features: Pressure Assembled Device. Interdigitated Amplifying Gate Configuration . All Diffused Structure . High dV/dt Capability . . Guaranteed Maximum Turn-Off Time.

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
1800	1800	1900

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

100 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. average value of on-state current	I_T(AV)_M		1718		A	Sinewave,180^o conduction,T_c=55^oC
RMS value of on-state current	I_T₍_RMS_)m		3450		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 27.2		kA kA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		3.7x10⁶		A²s	8.3 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.41		V	I_TM = 2550 A
Critical rate of rise of on-state current (5, 6)	di/dt		1000		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		500		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W
Average gate power dissipation	P_G(AV)		4		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		300		mA	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Gate voltage required to trigger all units	V_GT		3.0		V	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Peak negative voltage	V_RG_M		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_g_d		1.5	-	ms	V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C
Turn-on time	t_gt		2.5	-
Turn-off time (with V_R = -5 V)	t_q	-	170	-	ms	I_TM=1000A, t_p=1000us, di/dt=10A/us, V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/us
Reverse recovery current	I_r_m		-		A	I_TM=4000A, t_p=2000us, di/dt=60A/us