KP800A Disc Thyristor 1800v

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-KP800A 1800V

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Phase Control Thyristor

YZPST-KP800A1800V

Phase Control Thyristor 1900V is widely used in all kinds of electronic equipment and electronic products. It is used for controlled rectifier, inverter, frequency conversion, voltage regulation and contactless switch.Household electrical appliances in the dimming light, speed fan, air conditioner, TV sets, refrigerators, washing machines, cameras, combined sound, light and sound circuit, time controller, toy device, wireless remote control, camera, and the thyristor device is widely used in industrial control, etc.

Thyristor				Ratings
Symbol	Definition	Conditions		min.	typ.	max.	Unit
V EQ \F(RSM,DSM)	max. non-repetitive reverse/forward blocking voltage		T_J = 25°C			1900	V
V EQ \F(RRM,DRM)	max. repetitive reverse/forward blocking voltage		T_J = 25°C			1800	V
V_T	On-state voltage	I_T=1500 A	T_J = 25°C			1.70	V
I_T(AV)	average forward current	T_C=25°C				800	A
I_T(RMS)	RMS forward current	180° sine				2214	A
R_thJC	thermal resistance junction to case						K/W
R_thCH	thermal resistance case to heatsink						K/W
R_thJK	thermal resistance junction to heatsink					0.032	K/W
I_TSM	max. forward surge current	t = 10 ms; (50 Hz), sine	T_J = 25°C			12.7	kA
I²t	value for fusing	t = 10 ms; (50 Hz), sine	T_J = 25°C			806	kA²s
di/dt	Rate of rise of on-state current	T_J = 125°C; f = 50 Hz t_P=200µs;di_G/dt=0.15A/µs; I_G=0.15A;V_D= ⅔V_DRM	repetitive			500	A/µs
di/dt	Rate of rise of on-state current		non-repet			1000	A/µs
dv/dt	Maximum linear rate of rise of off-state voltage	V_D= ⅔V_DRM R_GK =∞; method 1 (linear voltage rise)	T_J = 125°C			1000	V/µs
V_GT	gate trigger voltage	V_D = 6V	T_J = 25°C			3.0	V
I_GT	gate trigger current	V_D = 6V	T_J = 25°C			300	mA
I_L	latching current		T_J = 25°C				A
I_H	holding current		T_J = 25°C			500	mA
t_gd	gate controlled delay time		T_J= 25°C			2.5	µs
t_q	Turn-off time	V_R=10 V; I_T=20A; V_D=⅔V_DRM	T_J = 150°C		200	400	µs
T_stg	storage temperature			-40		125	°C
T_J	virtual junction temperature			-40		125	°C
W_t	Weight						g
F	mounting force			10		20	kN