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6500V high power thyristor for phase control applications

$250

2-9
Piece/Pieces
$210

≥10
Piece/Pieces

option:

VRRM:6500V
VDRM:6500V
IRRM:40 mA
IDRM:200mA
dV/dt:1000 V/μsec
IT(AV):1000A
ITRMS:1650A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-KP1000A6500V

Brand: YZPST

Place Of Origin: China

VRRM: 6500V

VDRM: 6500V

IRRM: 40 mA

IDRM: 200mA

DV/dt: 1000 V/μsec

IT(AV): 1000A

ITRMS: 1650A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 10000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N:YZPST-KP1000A/6500V

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

VRRM ( 1)	V DRM ( 1)	VRSM ( 1)
6500	6500	6600

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in

accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit,comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor

under test.

Repetitive peak reverse leakage and off state

IRRM / IDRM

40 mA

200mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/μsec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. Average value of on-state current	IT(AV)		1000		A	Sinewave, 180o conduction TC=70 oC
RMS value of on-state current	ITRMS		1650		A	Nominal value
Peak one cpstcle surge	ITSM		18		kA	10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
(non repetitive) current	ITSM		18		kA
I square t	I2t		1620		kA2s
Latching current	IL		1500		mA	VD = 24 V; RL= 12 ohms
Holding current	IH		500		mA	VD = 24 V; I = 2.5 A
Peak on-state voltage	VTM		2.65		V	ITM = 1000A; Tvj= 125℃
Threshold voltage	VTo		1.24		V	Tvj= 125℃
Slope resistance	rT		1.01		mΩ	Tvj= 125℃
Critical rate of rise of on-state current (5, 6)	di/dt		500		A/μs	Switching from VDRM < 1500 V,
Critical rate of rise of on-state current (5, 6)	di/dt		500		A/μs	non-repetitive
Critical rate of rise of on-state current (6)	di/dt		-		A/μs	Switching from VDRM < 3500 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

50

W

tp = 40 us

Average gate power

dissipation

PG(AV)

10

W

Peak gate current

IGM

10

A

Gate current required to

trigger all units

IGT

400

mA

mA

mA

VD = 6 V;RL  = 3 ohms;Tj  = -40 oC   VD = 6 V;RL  = 3 ohms;Tj  = +25 oC VD = 6 V;RL  = 3 ohms;Tj  = +125oC

Gate voltage required to

trigger all units

VGT

-

2.6

-

V

V

V

VD = 6 V;RL  = 3 ohms;Tj  = -40 oC    VD = 6 V;RL  = 3 ohms;Tj  = 0- 125oC VD = Rated VDRM; RL  = 1000 ohms; Tj = + 125 oC

Peak negative voltage

VGRM

10

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

μs

ITM = 1000 A; VD  = Rated VDRM   Gate pulse: VG  = 20 V; RG  = 20 ohms; tr  = 0. 1 μs; tp  = 20 μs

Turn-off time (with VR  = -50 V)

tq

700

μs

ITM = 1000 A; di/dt = 1A/μs;

VR > 200 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG  = 0;    Tj = 125 oC; Duty cpstcle > 0.01%

Reverse recovery charge

Qrr

-

μAs

ITM = 2000 A; di/dt = 1.5 A/μs; VR > 200V

CASE OUTLINE AND DIMENSIONS.

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Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		50		W	tp = 40 us
Average gate power dissipation	PG(AV)		10		W
Peak gate current	IGM		10		A
Gate current required to trigger all units	IGT		400		mA mA mA	VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC
Gate voltage required to trigger all units	VGT		- 2.6 -		V V V	VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0- 125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC
Peak negative voltage	VGRM		10		V