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High Frequency High Voltage Diode 500mA

$1.2

≥100000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

100000 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-CL05-08

Brand: YZPST

Type: Intrinsic Semiconductor

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2015,ROHS

HS Code: 85411000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

High Frequency High Voltage Diode

YZPST - CL05-08

Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4. Max reverse recovery time to 40nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

1.Main Specification

No.	Item	Symbol	Unit	Rating	Conditions
1	Repetitive Peak Reverse Voltage	VRRM	KV	8
2	Average Forward Current	IF (AV)	mA	500	Tamb=60 oC 50HZ Sine-half Wave Rectification Average Value
3	Forward Surge Current	IFSM	A	15	Tamb=25 oC 50HZ Sine-half Wave,One Shot
4	Reverse Surge Current	IRSM	μA	-	Pulse width 1ms triangle wave single pulse
5	Maximum Junction Temperature	Tjmax	oC	130
6	Storage Temperature	Tstg	oC	-40~+130

No.

Item

Symbol

Unit

Rating

Conditions

Repetitive Peak Reverse Voltage

VRRM

Average Forward Current

IF (AV)

500

Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

Forward Surge Current

IFSM

Tamb=25 oC

50HZ Sine-half Wave,One Shot

Reverse Surge Current

IRSM

μA

Pulse width 1ms triangle wave single pulse

Maximum Junction Temperature

Tjmax

130

Storage Temperature

Tstg

-40~+130

2. Electric Specification

NO.	Item	Symbol	Unit	Rating	Test conditions
1	Forward Voltage Drop	VFM	V	15max	IFM=500mA
2	Normal Temperature Reverse Current	IRM1	μA	5max	VRM=8KV
3	High Temperature Reverse Current	IRM2	μA	5max	Tamb=100oC VRM=10KV
4	Reverse Breakdown Voltage	VZ	KV	8	IR=300mA
5	Reverse Recovery Time	trr	nS	100	IF=2mA, IRM=4mA 90%

NO.

Item

Symbol

Unit

Rating

Test conditions

Forward Voltage Drop

VFM

15max

IFM=500mA

Normal Temperature Reverse Current

IRM1