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10KV High Frequency High Voltage Diode

$1.25

1000-99999
Piece/Pieces
$0.9

≥100000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-HV37-10F

Brand: YZPST

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2008,ROHS

HS Code: 85411000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

High Frequency High Voltage Diode

YZPST-HV37-10F

8KV High Frequency High Voltage Diode 200mA

Characteristics

1. High junction temperature up to 130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4.Max reverse recovery time to 70nS

5. Excellent properties against HV surge impact

6. Axial leading wires which are weldable

7. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

1.Main Specification

No.

Item

Symbol

Unit

Rating

Conditions

Repetitive Peak Reverse Voltage

VRRM

Average Forward Current

IF (AV)

200

Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

Forward Surge Current

IFSM

Tamb=25 oC

50HZ Sine-half Wave,One Shot

Reverse Surge Current

IRSM

μA

Maximum Junction Temperature

Tjmax

130

Storage Temperature

Tstg

-40~+130

2. Electric Specification

NO.

Item

Symbol

Unit

Rating

Test conditions

Forward Voltage Drop

VFM

18max

IFM=200mA

Normal Temperature Reverse Current

IRM1

μA

5max

VRM=8KV

High Temperature Reverse Current

IRM2

μA

5max

Tamb=100oC VRM=8KV

Reverse Breakdown Voltage

IR=200mA

Reverse Recovery Time

trr

IF=2mA, IRM=4mA 90%

(Tamb=25 oC, unless otherwise specified)

3. Application

For high voltage rectification;

4. Derating of Forward Current

5.Dimensions (in mm))

Product Categories : Semiconductor Plastic Package > Plastic Package Diode

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