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Highly sensitive triggering levels X0405 SCR

$0.11

≥1000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1000 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-X0405

Brand: YZPST

IT(RMS): 4.0A

VDRM VRRM: 600V

IGT: 200µA

Tstg: -40 ~150℃

TJ: -40~125℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Silicon Controlled Rectifier (SCR)

YZPST-X0405

DESCRIPTION:

Thanks to highly sensitive triggering levels, the

X0405 SCR series is suitable for all applications

where the available gate current is limited, such as

ground fault circuit interruptors, overvoltage

crowbar protection in low power supplies,

capacitive ignition circuits, ...

MAIN FEATURES

Symbol	Value	Unit
I_T(RMS)	4.0	A
V_DRM V_RRM	600	V
I_GT	200	µA

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Storage junctiontemperature range	Tstg	-40 ~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (T =25℃)	V_DRM	600	V
Repetitive peak reverse voltage (T =25℃)	V_R_RM	600	V
Non repetitive surge peak Off-state voltage	V_DSM	V_DRM +100	V
Non repetitive peak reverse voltage	V_R_SM	V_R_RM +100	V
RMS on-state current (T =60℃)	I_T(RMS)	4.0	A
Non repetitive surge peak on-state current (180° conduction angle, F=50Hz)	I_TSM	30	A
Average on-state current (180° conduction angle)	I_T(AV)	2.5	A
I²t value for fusing (tp=10ms)	I²t	4.5	A²S
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns)	dI/dt	50	A/μS
Peak gate current	I_GM	1.2	A
Average gate power dissipation	P_G(AV)	0.2	W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)

Symbol	Test Condition		Value	Unit
I_GT	V =12V R =140Ω	MAX.	200	µA
V_GT	V =12V R =140Ω	MAX.	0.8	V
V_GD	V_D=V_DRM Tj=125℃ R=1KΩ	MIN.	0.1	V
I_L	I_G=1.2I_GT	MAX.	6	mA
I_H	IT=50mA	MAX.	5	mA
dV/dt	V_D=2/3V_DRM Gate Open Tj=125℃	MIN.	15	V/μs

STATIC CHARACTERISTICS

Symbol	Parameter		Value(MAX.)	Unit
V_TM	I_TM =8.0A tp=380μs	Tj =25℃	1.8	V
I_DRM	V_D=V_DRM V_R=V_RRM	Tj =25℃	5	μA
I_RRM	V_D=V_DRM V_R=V_RRM	Tj =125℃	1	mA