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High dv/dt rate TO-126 2P6M 2A Sensitive SCR

Name: SCR 2P6M 10-30UA TO126CU
Uploaded: 2024-07-01T05:54:02+08:00
Description: YZPST-2P6M 10-30UA

$45

50-999
Others
$39

≥1000
Others

option:

IT(RMS):20A
IGT:≤200μA
VDRM:600V
VRRM:600V
IT(RMS):2A
ITSM:20A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-2P6M 10-30UA

Brand: YZPST

Place Of Origin: China

IT(RMS): 20A, 2A

IGT: ≤200μA

VDRM: 600V

VRRM: 600V

ITSM: 20A

I2t: 2A2s

DI/dt: 50dI/dt

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Air

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHNAGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: 1000 pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

2P6M 2A Sensitive SCRs

DESCRIPTION:

The 2P6M 2A SCR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

MAIN FEATURES:

symbol	value	unit
IT(RMS)	2.0	A
IGT	≤200	μA
VDRM/VRRM	600	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~110	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600	V
RMS on-state current	IT(RMS)	2	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	20	A
I2t value for fusing (tp=10ms)	I2t	2	A2s
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	50	A/ μs

Peak gate current	IGM	0.2	A
Average gate power dissipation	PG(AV)	0.1	W
Peak gate power	PGM	0.5	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Symbol		Value
Symbol	Test Condition	MIN	TYPE	MAX	Unit
IGT	VD=12V, RL=33Ω	-	50	200	μA
VGT	VD=12V, RL=33Ω	-	0.6	0.8	V
VGD	VD=VDRM Tj=110℃	0.2	-	-	V
IH	IT=50mA	-	-	5	mA
IL	IG=1.2IGT	-	-	6	mA
dV/dt	VD=2/3×VDRM Tj=110℃ RGK=1KΩ	20	-	-	V/ µs