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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High dv/dt rate TO-126 600V 2P4M 2A SCR
High dv/dt rate TO-126 600V 2P4M 2A SCR
  • High dv/dt rate TO-126 600V 2P4M 2A SCR
  • High dv/dt rate TO-126 600V 2P4M 2A SCR
  • High dv/dt rate TO-126 600V 2P4M 2A SCR
  • High dv/dt rate TO-126 600V 2P4M 2A SCR
  • High dv/dt rate TO-126 600V 2P4M 2A SCR

High dv/dt rate TO-126 600V 2P4M 2A SCR

  • $0.1
    1000-9999
    Piece/Pieces
  • $0.07
    ≥10000
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-2P4M 10-30UA

Brand: YZPST

Place Of Origin: China

IT(RMS): 2.0A

IGT: ≤200μA

VDRM: 600V

VRRM: 600V

Tstg: -40~150℃

Tj: -40~110℃

ITSM: 20A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

2P4M 2A Sensitive SCRs


DESCRIPTION:
The 2P4M 2A SCR series provide high dv/dt rate
with strong resistance to electromagnetic interface.
They are especially recommended for use on residual
current circuit breaker, straight hair, igniter etc.
YZPST-2P4M 10-30UA



MAIN FEATURES:

symbol

value

unit

IT(RMS)

2.0

A

IGT

≤200

μA

VDRM/VRRM

600

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

℃

Operating junction temperature range

Tj

-40~110

℃

Repetitive peak off-state voltage (Tj=25℃)

VDRM

600

V

Repetitive peak reverse voltage (Tj=25℃)

VRRM

600

V

RMS on-state current

IT(RMS)

2

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

20

A

I2t value for fusing (tp=10ms)

I2t

2

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃  unless otherwise specified)

Symbol Value
Test Condition MIN TYPE MAX Unit
IGT VD=12V, RL=33Ω - 50 200 μA
VGT - 0.6 0.8 V
VGD VD=VDRM Tj=110℃ 0.2 - - V
IH IT=50mA - - 5 mA
IL IG=1.2IGT - - 6 mA
dV/dt VD=2/3×VDRM   Tj=110℃ RGK=1KΩ 20 - - V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=4A   tp=380μs Tj=25℃ MAX 1.5 V
IDRM VD=VDRM= VRRM RGK=1KΩ Tj=25℃ MAX 5 µA
IRRM Tj=110℃ 0.1 mA
PACKAGE MECHANICAL DATA
YZPST-2P4M TO-126


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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