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1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode
  • 1000V Power MOSFET Module N-Channel Enhancement Mode

1000V Power MOSFET Module N-Channel Enhancement Mode

  • $31.5
    20-99
    Piece/Pieces
  • $21.5
    ≥100
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-MS38N100

Brand: YZPST

Place Of Origin: China

VDSS: 1000V

ID25: 38A

RDS(on): ≤ 210mΩ

Trr: ≤ 300ns

VDGR: 1000V

VGSS: ±30V

VGSM: ±40V

IDM: 120A

TJ: -55 ... +150℃

TJM: 150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000

Transportation: Ocean,Land

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: T/T,L/C,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

VDSS = 1000V

ID25 = 38A

RDS(on) ≤ 210mΩ

trr ≤ 300ns

Features

 International Standard Package

 Low Intrinsic Gate Resistance

 miniBLOC with Aluminum Nitride Isolation

 Low Package Inductance

 Fast Intrinsic Rectifier

 Low RDS(on)  and QG

Advantages

 High Power Density

 Easy to Mount

 Space Savings

Applications

 DC-DC Converters

 Battery Chargers

 Switch-Mode and Resonant-Mode Power Supplies

 AC Motor Control

 High Speed Power Switching Appliccation

YZPST-MS38N100 Power MOSFET


Symbol Test Conditions Maximum Ratings
VDSS TJ      = 25℃ to 150℃                                                      1000 V
                              
VDGR TJ     = 25℃ to 150℃, RGS  = 1MΩ 1000 V
VGSS Continuous
土30
V
VGSM Transient 土40 V
ID25 TC   = 25℃ 38 A
IDM TC   = 25℃, Pulse Width Limited by TJM 120 A
I A TC = 25℃ 19 A
EAS TC = 25℃ 2 J
dv/dt IS     < IDM , VDD  < VDSS , TJ  < 150℃ 20 V/ns
PD T   = 25℃ 1000 W
TJ -55 ... +150 ℃
TJM 150 ℃
TSTG -55 ... +150 ℃
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
I ISOL £ 1mA, t = 1s 3000 V~
MD Mounting Torque for Base Plate 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in
Terminal Connection Torque
Weight 30 g


SOT-227B (IXFN) Outline

 SOT-227B (IXFN) Outline


Product Categories : Semiconductor Module Devices > Thyristor Module

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