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Home > Products > Semiconductor Module Devices > Thyristor Module > Thyristor with amplifying gate 1600V Thyristor Module 119A
Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A
  • Thyristor with amplifying gate 1600V Thyristor Module 119A

Thyristor with amplifying gate 1600V Thyristor Module 119A

  • $11.1
    50-999
    Piece/Pieces
  • $8.1
    ≥1000
    Piece/Pieces
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Overview
Product Attributes

Model No.: YZPST-SKKT107-16E

Brand: YZPST

Place Of Origin: China

VDRM: 1600V

VRRM: 1600V

VRSM: 1700V

IT(AV): 119A

IRMS: 190A

ITSM: 2250A

I2t: 25.3KA2s

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000

Transportation: Ocean,Land

Place of Origin: CHINA

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:

Thyristor Modules P/N:YZPST-SKKT107/16E 

Thyristor with amplifying gate 1600V Thyristor Module 119A

Features
 Heat transfer through aluminium nitride ceramic isolated metal baseplate
 Precious metal pressure contacts for high reliability
 Thyristor with amplifying gate
Typical Applications
 DC motor control
 AC motor starters
 Temperature control

 Professional light dimming

VDRM

VRRM

VRSM

1600V

1600V

1700V

YZPST-SKKT107-16E-1 Thyristor Module

Symbol Conditions Values Units
IT(AV) sin. 180; TC=85°C 119 A
IRMS 190
ITSM Tvj=25°C; 10ms 2250 A
I2t Tvj=25°C; 8.3…10ms 25.3 KA2s
VT Tvj=25°C; IT=300A max. 1.75 V
IDD Tvj=125°C; VRD=VRRM; VDD=VDRM max. 20 mA
IRD
tgd Tvj=25°C; IG=1A; diG/dt=1A/μs; VD=2/3VDRM 1 μs
tgr 2
(di/dt)cr Tvj=125°C max. 140 A/μs
(dv/dt)cr Tvj=125°C max. 1000 V/μs
tq Tvj=125°C 200 μs
IH Tvj=25°C; typ. /max. 250 mA
IL Tvj=25°C; RG=33Ω; typ. /max. 600 mA
VGT Tvj=25°C; d.c. min.1.0 V
IGT Tvj=25°C; d.c. min. 35 mA
VGD Tvj=125°C; d.c. max. 0.25 V
IGD Tvj=125°C; d.c. max.4 mA
Rth(j-c) per thyristor /per module 0.19 K/W
Rth(c-s) per thyristor /per module 0.1 K/W
Tvj -40…+130 °C
Tstg -40…+130 °C
Visol a.c. 50Hz; r.m.s.; 1s/1min. 3600/3000 V
YZPST-SKKT107-16E


Product Categories : Semiconductor Module Devices > Thyristor Module

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