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  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module
  • Low Leakage Current 120A 1600V Thyristor Module

Low Leakage Current 120A 1600V Thyristor Module

  • $19.2
    50-499
    Piece/Pieces
  • $15.2
    ≥500
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-SK120KQ16

BrandYZPST

Place Of OriginChina

VRRM1600V

VDRM1600V, 1700V

VDSM1700V

IRRM5mA

IT(AV)90A

IT(RMS)145A

ITSM2100A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability1000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
120A   1600V   Thyristor  Module
RoHS  Compliant
YZPST-SK120KQ16
PRODUCT FEATURES
      Compact Design
      One screw mounting
      Heat transfer and isolation through DBC
      Glass passivation thyristor chips
      Low Leakage Current
APPLICATIONS
      Soft starters
      Temperature control

      Light control

YZPST-SK120KQ16-1

ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)

Symbol Parameter Test Conditions Values Unit
VRRM Maximum Repetitive Reverse Voltage Tvj=125 1600 V
VDRM Maximum repetitive peak off-state voltage
VRSM Non-Repetitive Reverse Voltage Tvj=125 1700 V
VDSM Non-repetitive peak off-state voltage
IRRM Maximum Repetitive Reverse Current Tvj=125 5 mA
IDRM Maximum repetitive peak off-state Current
IT(AV) Mean On-state Current TC=85 90
IT(RMS) RMS Current TC=85, sin180 145 A
ITSM Non Repetitive Surge Peak On-state Current 10ms, Tj=25 2100
I2t For Fusing 10ms, Tj=25 20000 A2S
VTM Peak on-state voltage ITM=300A 1.8 V
dv/dt critical rate of rise of off-state voltage VD =2/3VDRM   Gate Open Tj=125 1000 V/us
IGT gate trigger current     max. 80 mA
VGT gate trigger voltage     max. 1.5 V
IH gate trigger current 250 mA
IL latching current 300 mA
Viso AC   50Hz   RMS    1min 2500 V
TJ Junction Temperature -40 to +125
TSTG Storage Temperature Range -40 to +125
RthJC Junction to Case Thermal Resistance(Per thyristor chip ) 0.35  /W
Torque mounting force, Module to Sink 2 Nm
Tsolder Teminals,10s 260

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Product Categories : Semiconductor Module Devices > Thyristor Module

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