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High dv/dt rate 600V BTB16-600B 16A Triac

$0.15

5000-9999
Piece/Pieces
$0.13

≥10000
Piece/Pieces

option:

IT(RMS):16A
VDRM:600V
VRRM:600V
VTM:≤ 1.5v
Tstg:-40~150℃
Tj:-40~125℃
ITSM:160A
I2t:128A2s

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTB16-600B

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM: 600V

VRRM: 600V

VTM: ≤ 1.5v

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 160A

I2t: 128A2s

DI/dt: 50A/μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Others

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTB16-600B 600V BTB16-600B 16A Triac

BTA16/BTB16 (BT139) Series16ATriacs

DESCRIPTION:

With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTB16-600B-1

MAIN FEATURES:

symbol	value	unit
IT(RMS)	16	A
VDRM/VRRM	600/800/ 1200	V
VTM	≤ 1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25C)	VDRM	600/800/ 1200	V
Repetitive peak reverse voltage (Tj=25C)	VRRM	600/800/ 1200	V
RMS on-state current	IT(RMS)	16	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	160	A
I2t value for fusing (tp=10ms)	I2t	128	A2s
Critical rate of rise of on-state current(IG=2× IGT)	dI/dt	50	A/μs
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	5	W

ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)

3 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		TW	SW	CW	BW	Unit
IGT	VD=12V,			5	10	35	50	A
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.3				V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0 2				V
IH	IT=100mA		MAX	15	25	40	60	A
		Ⅰ-Ⅲ		20	30	50	70	m
IL	IG=1.2IGT	Ⅱ	MAX	25	40	60	90	A
	VD=2/3VDRM Tj=125C Gate open
dV/dt	VD=2/3VDRM Tj=125C Gate open		MIN	100	200	500	1000	V/µs

4 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		C	B	Unit
		Ⅰ- Ⅱ-Ⅲ		25	50	A
IGT	VD=12V,	Ⅳ		50	70	A
VGT	RL=33Ω	ALL	MAX	1.5		V
VGD	VD=VDRM	ALL	MIN	0.2		V
IH	IT=100mA		MAX	40	60	A
		Ⅰ-Ⅲ- Ⅳ		50	70	m
IL	IG=1.2IGT	Ⅱ	MAX	70	90	A
	VD=2/3VDRM Tj=125C Gate open
dV/dt	VD=2/3VDRM Tj=125C Gate open		MIN	200	500	V/µs