Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac
  • High dv/dt rate 600V BTB16-600B 16A Triac

High dv/dt rate 600V BTB16-600B 16A Triac

  • $0.15
    5000-9999
    Piece/Pieces
  • $0.13
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTB16-600B

BrandYZPST

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM600V

VTM≤ 1.5v

Tstg-40~150℃

Tj-40~125℃

ITSM160A

I2t128A2s

DI/dt50A/μs

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTB16-600B 600V BTB16-600B 16A Triac

BTA16/BTB16  (BT139) Series16ATriacs

DESCRIPTION:


With high ability to withstand the shock loading of Large current, BTA16/BTB16 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrantsproducts especially recommended for use on inductive load. From all three terminals to external heatsink, BTA16 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTB16-600B-1


MAIN FEATURES:

symbol

value

unit

IT(RMS)

16

A

VDRM/VRRM

600/800/ 1200

V

VTM

≤ 1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25C)

VDRM

600/800/ 1200

V

Repetitive peak reverse voltage (Tj=25C)

VRRM

600/800/ 1200

V

RMS on-state current

IT(RMS)

16

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

ITSM

160

 A

I2t value for fusing (tp=10ms)

I2t

128

A2s

Critical rate of rise of on-state current(IG=2× IGT)

dI/dt

50

A/μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25C unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 A
VGT RL=33Ω - - MAX 1.3 V
VGD VD=VDRM - - MIN 0 2 V
IH IT=100mA MAX 15 25 40 60 A
- 20 30 50 70 m
IL IG=1.2IGT MAX 25 40 60 90 A
VD=2/3VDRM   Tj=125C Gate open
dV/dt MIN 100 200 500 1000 Vs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 A
IGT VD=12V, 50 70 A
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 40 60 A
--  50 70 m
IL IG=1.2IGT MAX 70 90 A
VD=2/3VDRM   Tj=125C Gate open
dV/dt MIN 200 500 Vs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=22.5A   tp=380μs Tj=25C MAX 1.5 V
IDRM Tj=25C 5 A
IRRM VDRM= VRRM Tj=125C MAX 1 A

THERMAL RESISTANCES


Symbol Test Condition Value Unit
Rth(j-c) TO-220A(Ins) 2.1 /W
TO-220B(Non-Ins) 1.3
TO-220F(Ins) 2.3
junction to case(AC) TO-263 2.4

ORDERING INFORMATION
YZPST-BTB16-600B-2
PACKAGE MECHANICAL DATA
YZPST-BTB16-600B


Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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