Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > TO-94 Ceramic stud triacs 100A

TO-94 Ceramic stud triacs 100A

  • $26
    ≥100
    Piece/Pieces
Payment Type:
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Incoterm:
FOB,CFR,CIF
Min. Order:
100 Piece/Pieces
Transportation:
Ocean,Air
Port:
Shanghai
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  • Product Description
Overview
Product Attributes

Model No.YZPST-KS100A600V

BrandYZPST

CertificationRoHS

Supply Ability & Additional Information

PackagingFor more detailed product information and transaction information, please contact our email address : info@yzpst.com

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
For more detailed product information and transaction information, please contact our email address : info@yzpst.com

Ceramic stud triacs  YZPST-KS100A600V


Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

ITRMS

RMS value of on-state current

100

A

Nominal value

 

ITSM

Peak one cycle surge

(non repetitive) current

 

900

 

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C

I2t

I square t

4050

A2s

8.3 msec and 10.0 msec

IL

Latching current

100

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

30

mA

VD = 12 V; I = 1 A

 

VTM

 

Peak on-state voltage

 

2.0

 

V

ITM = 150 A; Duty cycle 0.01%; Tj = 25 °C

 

 

di/dt

 

Critical rate of rise of on-state current

 

non-repetitive

 

300

 

 

A/µs

 

Gate drive 20V, 20Ω, tr1μs, Tj=Tjmax,

anode voltage80% VDRM

repetitive

50

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

 

600

 

V

 

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

 

700

 

V

 

IDRM

IRRM

Repetitive  peak  off  state  current

Repetitive peak reverse   current

 

10

 

mA

 

Tj = 125 °C ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

100

V/µs

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

-

W

 

PGM

Peak gate power dissipation

-

W

 

IGM

Peak gate current

-

A

 

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1

V

 

rT

Slope resistance

2.4

 

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

tq

Turn-off time

-

µs

Tj = 125 °C

 

td

 

Delay time

 

-

Gate current 1A, di/dt=1A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

 

 

Thermal And Mechanical

Symbol

 

Parameter

Values

Units

 

Test Conditions

Tj

Operating temperature

-40~125

°C

 

 

Tstg

Storage temperature

-40~150

°C

 

 

 

R th (j-c)

Thermal  resistance  -  junction  to

case

 

0.4

 

°C/W

DC operation ,Single sided

cooled

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

 

 

W

Weight

 

-

g

about

 


OUTLINE

triac KS100A600


 
 

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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