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High dv/dt rate BTA316-800E 16A triac TO-220

$0.16

3000-9999
Piece/Pieces
$0.14

≥10000
Piece/Pieces

option:

IT(RMS):16A
VDRM:≥800V
VRRM:≥800V
ITSM:160A
I2t:140A2S
IGM:4A
VGM:16V

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA316-800E

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM: ≥800V

VRRM: ≥800V

ITSM: 160A

I2t: 140A2S

IGM: 4A

VGM: 16V

PGM: 40W

PG(AV): 1W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Air,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTA316-800E

High dv/dt rate BTA316-800E 16A triac TO-220

Package
TO-220F

YZPST-BTA316-600B
Main Feature(Tj=25℃)

Symbol	Value	Unit
IT(RMS)	16	A
VDRM / VRRM	≥800	V
ITSM	160	A

Absolute ratings (Limiting Values)

Symbol	Parameter	Value		Unit
IT (RMS)	Rms on-state current(full sine wave)	16		A
	Non- repetitive Peak on-state
ITSM	Current (Tj=25℃,tp=20ms)	160		A
I2t	I2t for fusing(tp=10ms)	140		A2S
IGM	Peak gate current	4		A
VGM	Peak gate voltage	16		V
PGM	Peak gate power	40		W
PG(AV)	Average gate power	1		W
dIT/dt	Repetitive rate of rise of on-state current after triggering	Ⅰ- Ⅱ-Ⅲ	50
dIT/dt	(IT=6A,IG =0.2A,dlG/dt=0.2A/us)	Ⅳ	50	A/μs
Tstg	Storage temperature	110		℃
Tj	Operating junction temperature	85		℃

Thermai Resistances

Symbol	Parameter	Condition		Type	Unit
Rth j-c	Thermal Resistance,Junction to case	One cycle	220F	1.2	℃/W
Rth j-a	Thermal Resisatance,Junction to ambient	——	——	60	℃/W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Test Conditions	Type	Max		Unit
	BTA316-800		C	B
	VD=12V IT=0.1A
	T2+ G+	11	16	25	mA
IGT	T2+ G-	12	20	30	mA
	T2- G-	18	25	50	mA
	T2- G+				mA
IH	VD=12V IGT=0.1A		25	50	mA
VTM	IT=20A	— 1.3—	1.7		V
I DRM	V DRM=520V		10		μA
IRRM	VRRM=520V		15		μA
	VD=12V IT=0.1A
VGT	Tj=125℃	——	1.65		V
	VD=VDRM（MAX）
ID	Tj=125℃	——	0.5		mA