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Latching current 600V TO-252 8A Triac

$0.11

5000-19999
Piece/Pieces
$0.09

≥20000
Piece/Pieces

option:

IT(RMS):8A
VDRM/VRRM:600/800V
VTM:≤1.6V
Tstg:-40~150℃
Tj:-40~125℃
ITSM:65A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BT137-600D

Brand: YZPST

Place Of Origin: China

IT(RMS): 8A

VDRM/VRRM: 600/800V

VTM: ≤1.6V

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 65A

I2t: 21A2s

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

BT137 Series 8A Triacs

DESCRIPTION

With low holding and latching current, BT137

Series triacs are especially recommended for

use on middle and small resistance type power

load.

MAIN FEATURES:

symbol	value	unit
IT(RMS)	8	A
VDRM/VRRM	600/800	V
VTM	≤1.6	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800	V
RMS on-state current	IT(RMS)	8	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	65	A
I2t value for fusing (tp=10ms)	I2t	21	A2s

Critical rate of rise of on-state current (IG=2 × IGT) Ⅰ- Ⅱ-Ⅲ 50

dI/dt Ⅳ 10 A/ μs

Peak gate current IGM 2 A

Average gate power dissipation PG(AV) 0.5 W

Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter				Value
Parameter	Test Condition	Quadrant		D	E	F	G	Unit
		Ⅰ- Ⅱ-Ⅲ		5	10	25	50
IGT		Ⅳ		10	25	70	100	mA
VGT	VD=12V, RL=33Ω	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MAX	1.3				V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ-Ⅳ	MIN	0.2				V
IH	IT=100mA		MAX	10	20	40	60	mA
		Ⅰ-Ⅲ-Ⅳ		10	30	50	70
IL	IG=1.2IGT	Ⅱ	MAX	20	40	70	100	mA
	VD=0.66×VDRM Tj=125℃ Gate open
dV/dt	VD=0.66×VDRM Tj=125℃ Gate open		MIN	20	50	100	200	V/ µs