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600V BT139X-600D triac with low holding and latching current

$0.16

3000-9999
Piece/Pieces
$0.13

≥10000
Piece/Pieces

option:

IT(RMS):16A
VDRM:600V
VRRM:800V
VTM:≤1.6V
Tstg:-40~150℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BT139X-600D

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM: 600V

VRRM: 800V

VTM: ≤1.6V

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 140A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Air,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CIF,CFR

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-BT139 Series 16A Triacs

YZPST-BT139X-600D

DESCRIPTION:

With low holding and latching current, BT139 Series triacs are especially recommended for use on middle and small resistance type power load.

MAIN FEATURES:

symbol	value	unit
IT(RMS)	16	A
VDRM/VRRM	600/800	V
VTM	≤1.6	V

ABSOLUTE MAXIMUM RATINGS:

Parameter		Symbol	Value	Unit
Storage junction temperature range		Tstg	-40~150	℃
Operating junction temperature range		Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)		VDRM	600/800	V
Repetitive peak reverse voltage (Tj=25℃)		VRRM	600/800	V
RMS on-state current		IT(RMS)	16	A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)		ITSM	140	A
I2t value for fusing (tp=10ms)		I2t	98	A2s
Critical rate of rise of on-state current (IG=2 × IGT)		Ⅰ- Ⅱ-Ⅲ	50
Critical rate of rise of on-state current (IG=2 × IGT)	dI/dt	Ⅳ	10	A/ μs
Peak gate current		IGM	2	A

Average gate power dissipation

PG(AV)

0.5

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter Value

Test Condition Quadrant D E F Unit

Ⅰ- Ⅱ-Ⅲ 5 10 25

IGT Ⅳ 10 25 70 mA

VGT VD=12V, RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V

VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V

IH IT=100mA MAX 10 20 40 mA

Ⅰ-Ⅲ-Ⅳ 15 30 50

IL IG=1.2IGT Ⅱ MAX 20 40 70 mA

VD=0.66×VDRM Tj=125℃ Gate open

dV/dt MIN 20 50 100 V/ µs

THERMAL RESISTANCES

Symbol Test Condition Value Unit

TO-220C 1.3

Rth(j-c) junction to case(AC) TO-220A(Ins) 2 ℃/W

PACKAGE MECHANICAL DATA