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High ability to withstand 800V BTA24-800CW triac TO-220

$0.24

2000-19999
Piece/Pieces
$0.19

≥20000
Piece/Pieces

option:

IT(RMS):25A
VDRM:800V
VRRM:800V
VTM:≤1.5A
Tstg:-40~150℃
Tj:-40~125℃
ITSM:250A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA24-800CW

Brand: YZPST

Place Of Origin: China

IT(RMS): 25A

VDRM: 800V

VRRM: 800V

VTM: ≤1.5A

Tstg: -40~150℃

Tj: -40~125℃

ITSM: 250A

I2t: 340A2s

DI/dt: 50A/ μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000000

Transportation: Ocean,Land,Air

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA24/BTB24 Series 25A Triacs

High ability to withstand 800V BTA24-800CW triac TO-220

YZPST-BTA24-800CW

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA24/BTB24 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.

With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA24 provides a rated insulation voltage of 2500 VRMS complying with UL standards

YZPST-BTA24-800BW

MAIN FEATURES:

symbol	value	unit
IT(RMS)	25	A
VDRM/VRRM	600/800/1200/1600	V
VTM	≤1.5	V

ABSOLUTE MAXIMUM RATINGS:

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (Tj=25℃)	VDRM	600/800/1200/1600	V
Repetitive peak reverse voltage (Tj=25℃)	VRRM	600/800/1200/1600	V
RMS on-state current	IT(RMS)	25	A
Non repetitive surge peak on-state current (full cycle, F=50Hz)	ITSM	250	A
I2t value for fusing (tp=10ms)	I2t	340	A2s
Critical rate of rise of on-state current(IG=2 × IGT)	dI/dt	50	A/ μs

Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W
Peak gate power	PGM	10	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		CW	BW	Unit
IGT	VD=12V,			35	50	mA
VGT	RL=33Ω	Ⅰ- Ⅱ-Ⅲ	MAX	1.3		V
VGD	VD=VDRM	Ⅰ- Ⅱ-Ⅲ	MIN	0.2		V
IH	IT=100mA		MAX	60	80	mA
		Ⅰ-Ⅲ		70	90
IL	IG=1.2IGT	Ⅱ	MAX	80	100	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	1000	1500	V/ µs

4 Quadrants：

Parameter				Value
Parameter	Test Condition	Quadrant		C	B	Unit
		Ⅰ- Ⅱ-Ⅲ		25	50	mA
IGT	VD=12V,	Ⅳ		50	70	mA
VGT	RL=33Ω	ALL	MAX	1.5		V
VGD	VD=VDRM	ALL	MIN	0.2		V
IH	IT=100mA		MAX	60	75	mA
		Ⅰ-Ⅲ- Ⅳ		70	80
IL	IG=1.2IGT	Ⅱ	MAX	90	100	mA
	VD=2/3VDRM Tj=125℃ Gate open
dV/dt	VD=2/3VDRM Tj=125℃ Gate open		MIN	200	500	V/ µs