Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > High ability 600V BTB06-600B TO-220 triac
  • High ability 600V BTB06-600B TO-220 triac
  • High ability 600V BTB06-600B TO-220 triac
  • High ability 600V BTB06-600B TO-220 triac
  • High ability 600V BTB06-600B TO-220 triac
  • High ability 600V BTB06-600B TO-220 triac

High ability 600V BTB06-600B TO-220 triac

  • $0.09
    5000-49999
    Piece/Pieces
  • $0.07
    ≥50000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTB06-600B

BrandYZPST

Place Of OriginChina

IT(RMS)6A

VDRM600V

VRRM600V

VTM≤1.5V

Tstg-40~150℃

Tj-40~125℃

ITSM60A

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHUNA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA06/BTB06 Series 6A Triacs

YZPST-BTB06-600B

High ability 600V BTB06-600B  TO-220 triac

DESCRIPTION:
With high ability to withstand the shock loading of Large current, BTA06/BTB06 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface.
With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA06 provides a rated insulation voltage of 2500 VRMS complying with UL standards

TO-220


MAIN FEATURES:

symbol

value

unit

IT(RMS)

6

A

VDRM/VRRM

600/800

V

VTM

≤1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~125

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800

V

RMS on-state current

IT(RMS)

6

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

 

ITSM

 

60

 

A

I2t value for fusing (tp=10ms)

I2t

18

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

2

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

3 Quadrants

Parameter Value
Test Condition Quadrant TW SW CW BW Unit
IGT VD=12V, 5 10 35 50 mA
VGT RL=33Ω - - MAX 1.5 V
VGD VD=VDRM - - MIN 0.2 V
IH IT=100mA MAX 6 10 35 60 mA
- 10 15 50 70
IL IG=1.2IGT MAX 15 25 60 80 mA
VD=2/3VDRM   Tj=125 Gate open
dV/dt MIN 50 100 500 1000 V/ µs

4 Quadrants

Parameter Value
Test Condition Quadrant C B Unit
- - 25 50 mA
IGT VD=12V, 50 70 mA
VGT RL=33Ω ALL MAX 1.5 V
VGD VD=VDRM ALL MIN 0.2 V
IH IT=100mA MAX 40 60 mA
IL IG=1.2IGT --  MAX 50 70 mA


THERMAL RESISTANCES

 

Symbol Test Condition Value Unit
TO-251-4R/ TO-252-4R 2.8
TO-220A(Ins 3.4
TO-220B(Non-Ins 2.2 /W
Rth(j-c) junction to case(AC) TO-220F(Ins 3.2

PACKAGE MECHANICAL DATA

TO-220A

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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