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TO-220F BTA204X-800E triac have good performance at dv/dt

$0.08

10000-49999
Piece/Pieces
$0.06

≥50000
Piece/Pieces

option:

IT(RMS):4A
VDRM:800V
VRRM:800V
ITSM:25A
I2t:3.1A2S
IGM:2A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-BTA204X-800E

Brand: YZPST

Place Of Origin: China

IT(RMS): 4A

VDRM: 800V

VRRM: 800V

ITSM: 25A

I2t: 3.1A2S

VGM: 5V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 10000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTA204X-800E

TO-220F BTA204X-800E triac have good performance at dv/dt

Package

TO-220F

BTA204X TO-220F

Main Feature( (Tj=25℃)

Symbol	Value	Unit
IT(RMS)	4	A
VDRM / VRRM	≥800	V
ITSM	25	A

Absolute ratings (Limiting Values)

Symbol	Parameter	Value	Unit
IT (RMS)	Rms on-state current(full sine wave)	4	A
ITSM	Non- repetitive Peak on-state Current (Tj=25℃,tp=20ms)	25	A
I2t	I2t for fusing(tp=10ms)	3.1	A2S
IGM	Peak gate current	2	A
VGM	Peak gate voltage	5	V
PGM	Peak gate power	5	W
PG(AV)	Average gate power	0.5	W
di/dt	Repetitive rate of rise of on-state current after triggering (IT=6A,IG=0.2A,dlG/dt=0.2A/us)	100	A/μs
Tstg Tj	Storage temperature Operating junction temperature	-40--+150 -40--+110	℃

Thermal Resistances

Symbol

Parameter

Condition

Min

Type

Max

Unit

Rth j-mb

Thermal Resistance, Junction to mb

One cycle Half cycle

——

3.0

3.7

K/W

Rth j-a

Thermal

Resisatance,Junction to ambient

in free air

——

K/W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol	Conditions		Min	Type	Max	Unit
	BT204-
	VD=12V IT=0.1A T2+ G+
	T2+ G-				35	mA
IGT	T2- G-		——		35	mA
			——		35	mA
			——
IH	VD=12V IGT=0.1A			2	12	mA
IL	IG=2×IGT	Ⅰ-Ⅲ			6	mA
IL	IG=2×IGT	Ⅱ			9	mA
VTM	IT=8A		——	1.25	1.7	V
IDRM	V DRM=600V				10	μA
IRRM	VRRM=600V				10	μA
	VD=12V IT=0.1A			0.7	1.65	V
VGT	VD=400V IT=0.1A		0.25	0.4	1.5	V
	Tj=125℃
	VD=VDRM（MAX）					mA
ID	Tj=125℃		——	0.1	0.5	mA