Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 40A BTA40-600B TG40C60 are isolated molded triacs
  • 40A BTA40-600B TG40C60 are isolated molded triacs
  • 40A BTA40-600B TG40C60 are isolated molded triacs
  • 40A BTA40-600B TG40C60 are isolated molded triacs
  • 40A BTA40-600B TG40C60 are isolated molded triacs
  • 40A BTA40-600B TG40C60 are isolated molded triacs

40A BTA40-600B TG40C60 are isolated molded triacs

  • $2.6
    300-999
    Piece/Pieces
  • $2.1
    ≥1000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA40-600B TG40C60

BrandYZPST

Place Of OriginChina

IT RMS40A

PG AV1W

ITSM400 A

I2t880A2S

PGM10W

IGM8A

VGM10V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

TRIAC (ISOLATED TYPE)

YZPST-BTA40-600B TG40C60

TG40C/E/D are isolated molded triacs

suitable for wide range of applications like

copier, microwave oven, solid state switch,

motor control, light control and heater

control.

IT AV 40A

High surge capability 400A

Isolated Nounting AC2500V

Tab Terminals

YZPST-BTA40-600B TG40C60


TG

Maximum Ratings

Symbol

Item

Conditions

Ratings

Unit

IT RMS 

R.M.S. On-State Current

Tc

40

A

ITSM

Surge On-State Current

One cycle, 50Hz/, peak, non-repetitive

400 

A

I2t

I2t

Value for one cycle of surge current

880

A2S

PGM 

Peak Gate Power Dissipation

 

10

W

PG AV

Average Gate Power Dissipation

 

1

W

IGM

Peak Gate Current

 

8

A

VGM 

Peak Gate Voltage

 

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25  VD=1/2VDRM  dIG/dt=1A/μS

50

A/μS

Tj

Operating Junction Temperature

 

-25+125

Tstg 

Storage Temperature

 

-40+125

VISO 

Isolation Breakdown Voltage R.M.S.

A.C.1 minute

2500

V

 

Mounting Torque M4

Recommended Value 1.0 1.41014

14

kgf.CM

Maximum Ratings   

Tj=25 unless otherwise specified

Symbol

Item

Ratings

Unit

TG40C60

TG40C80

TG40C100

TG40C12

V

VDRM 

Repetitive Peak Off-State Voltage

600

800

1000

1200

Electrical Characteristics

Symbol

Item

Conditions

Ratings

Unit

IDRM 

Reptitive Peak Off-State Current, max

VD=VDRM, Single phase, half wave, Tj=125

5

mA

VTM

Peak On-State Voltage, max

On-State Current On-State Current 2X IT (RMS),Inst. measurement

1.55

V

I GT1 +

1

Gate Trigger Current, max

Tj =25, IT=1A, VD=6V

50

mA

I GT1 -

2

Tj =25, IT=1A, VD=6V

50

mA

I GT3 +

3

 

-

mA

I GT3 +

4

Tj =25, IT=1A, VD=6V

50

mA

V GT1+

1

Gate Trigger Voltage, max

Tj =25, IT=1A, VD=6V

3

V

V GT1-  

2

Tj =25, IT=1A, VD=6V

3

V

V GT3+

3

 

-

V

V GT3-

4

Tj =25, IT=1A, VD=6V

3

 

VGD 

Non-Trigger Gate Voltage, min

Tj =25,  VD=1/2VRRM

0.2

V

tgt

Turn On Time, max.

IT=(RMS),IG=100mA,VD=1/2VDRM,Tj=25,dIG/dt=1A/μS

10

V

dv/dt

Critical Rate of Rise on-State Voltage,min.

Tj=25,VD=2/3VDRM Exoponential wave.

500

V/μS

(dv/dt) c

Critical Rate of Rise off-State Voltage at commutation, min

Tj=25,VD=2/3VDRM di/dtc=15A/μS

5

V/μS

IH

Holding Current, typ.

Tj =25

60

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

0.9

℃/W



Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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