High Power Thyristor
YZPST-DCR1020SF65-1
application of thyristors dc motor thyristor control Pressure Assembled Device thyristorAll ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.
Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 4200 volts
. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) | | 640 | | A | Sinewave,180o conduction,T =60oC c |
| RMS value of on-state current | ITRMS | | 1005 | | A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current | ITSM | | - 8.5 | | KA KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
| I square t | I2t | | 0.36x106 | | A2s | 8.3 msec and 10.0 msec |
| Latching current | IL | | 600 | | mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH | | 200 | | mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM | | 3.6 | | V | ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j |
| Critical rate of rise of on-state current (5, 6) | di/dt | | - | | A/ s | Switching from VDRM 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt | | 100 | | A/ s | Switching from VDRM 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions | | Peak gate power dissipation | PGM | | 150 | | W | tp = 40 us | | Average gate power dissipation | PG(AV) | | 5 | | W | | | Peak gate current | IGM | | - | | A | | | Gate current required to trigger all units | IGT | | - 300 - | | mA mA mA | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j | | Gate voltage required to trigger all units | V | | - 3.0 - | | V V V | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j | | Peak negative voltage | VGRM | | 5 | | V | | |
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Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM | | 150 | | W | tp = 40 us |
| Average gate power dissipation | PG(AV) | | 5 | | W | |
| Peak gate current | IGM | | - | | A | |
| Gate current required to trigger all units | IGT | | - 300 - | | mA mA mA | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j |
| Gate voltage required to trigger all units | V | | - 3.0 - | | V V V | V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j |
| Peak negative voltage | VGRM | | 5 | | V | |
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td | | - | 0.5 | s | ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s |
| Turn-off time (with VR = -50 V) | tq | | - | 600 | s | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V; Re-applied dV/dt = 20 V/ s linear to 80% VDRM; VG = 0; T = 125 oC; Duty cPSTCle j 0.01% |
| Reverse recovery charge | Qrr | | * | | C | ITM = 1000 A; di/dt = 25 A/ s; VR -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 | | oC | |
| Storage temperature | Tstg | -40 | +125 | | oC | |
| Thermal resistance - junction to case | R (j-c) | | 0.022 0.052 | | o C/W | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | R (c-s) | | 0.004 0.008 | | o C/W | Double sided cooled * Single sided cooled * |
| Thermal resistamce - junction to sink | R (j-s) | | - - | | o C/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 18 | 22 | | kN | |
| Weight | W | | | - | g | |
* Mounting surfaces smooth, flat and greased
CASE OUTLINE AND DIMENSIONS
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