Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > High power thyristor for phase control applications 1600V

Contact Supplier

Mr. John chang

Leave a message

Contact Now

High power thyristor for phase control applications 1600V

$350

1-9
Piece/Pieces
$250

≥10
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-KP4350A1600V

Brand: YZPST

VRRM: 1600V

VDRM: 1600V

I RRM /I DRM: 450A

I T(AV): 4350A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

High power thyristor for phase control applications

YZPST-KP4350A1600V

Features:

. All Diffused Structure

. Linear Amplifying Gate Configuration

. Blocking capabilty up to 1600 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
KP4350A	1600	1600	1700

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

450 mA (3)

Critical rate of voltage rise

dV/dt (4)

300 V/msec

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		4350		A	Sinewave,180^o conduction,T_S=70^oC
Peak one cpstcle surge (non repetitive) current	I_TSM		48900		A	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		11.9x10⁶		A²s	10.0 msec
Latching current	I_L		1000		mA	V_D = 12 V; R_L= 12 ohms
Holding current	I_H		450		mA	V_{D =} 12 V; I = 2.5 A
Peak on-state voltage	V_TM		1.5		V	I_TM = 6000 A; Duty cpstcle £ 0.01% T_j = 25 ^oC
Critical rate of rise of on-state current (5)	di/dt		200		A/ms	Switching from V_DRM £ 1000 V, non-repetitive

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		15		A
Gate current required to trigger all units	I_GT	30	300 200 125		mA mA mA	V_D = 12 V;R_L = 6 ohms;T_j = -40 ^oC V_D = 12 V;R_L = 6 ohms;T_j = +25 ^oC V_D = 12 V;R_L = 6 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 3		V V V	V_D = 12 V;R_L = 6 ohms;T_j = -40 ^oC V_D = 12 V;R_L = 6 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		15		V