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High dV/dt Capability 1600V high power thyristor for phase control applications

$165

1-9
Piece/Pieces
$125

≥10
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-R3559TD16K

Brand: YZPST

VRRM: 1600V

VDRM: 1600V

VRSM: 1700V

IRRM / IDRM: 20mA/150mA

DV/dt: 1000V/μsec

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

high power thyristor YZPST-R3559TD16K

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3559TD16K

  1600

  1600

  1700

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range -40 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated V_DRM. Gate open.

     Tj = 125 ^oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

      with EIA/NIMA Standard RS-397, Section

      5-2-2-6. The value defined would be in addi-

      tion to that obtained from a snubber circuit,

      comprising a 0.2 mF capacitor and 20 ohms

      resistance in parallel with the thristor under

      test.

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  3500

A

Sinewave,180^o conduction,T_c=70^oC

RMS value of on-state current

I_TRMS

  7000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

42000



38000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

7.5x10⁶

A²s

8.3 msec

Latching current

I_L

    1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.95

V

I_TM = 5000 A; Tj = 125 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

      800

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

      300

A/ms

Switching from V_DRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p= 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current required to trigger all units

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

20

V

1600V high power thyristor

thyristor for phase control applications

High dV/dt thyristor

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Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		3500		A	Sinewave,180^o conduction,T_c=70^oC
RMS value of on-state current	I_TRMS		7000		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		42000 38000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		7.5x10⁶		A²s	8.3 msec
Latching current	I_L		1000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		500		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.95		V	I_TM = 5000 A; Tj = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		300		A/ms	Switching from V_DRM £ 1000 V