Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > High power Standard rectifier diode 6000v

High power Standard rectifier diode 6000v

  • $46
    1-99
    Piece/Pieces
  • $32
    ≥100
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-ZP1363A6000V

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginCHINA

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Standard Rectifier

YZPST-ZP1363A6000V   


GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER


Features: All Diffused Structure . High Surge rating. Soft Reverse Recovery. Rugged Ceramic Hermetic Package. Pressure Assembled Device

Typical Applications:  Rectifier for Drives Applications. Medium voltage converters. Pulsed power applications. Crowbar Applications

Typical applications:

Rectifier for Drives Applications

. Medium voltage converters

. Pulsed power applications

. Crowbar Applications 




                             High Pressure High Power Rectifier Diode 6000V






 6000v in4007 Auto Rectifier Diode




ELECTRICAL CHARACTERISTICS AND RATINGS

 High Pressure High Power Rectifier Diode 6000V


Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Max. Average value of on-state current

IF(AV)M

 

1363

 

A

Sinewave,180oconduction,Tc=85oC

RMS value of on-state current

IF(RMS)M

 

2142

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

IFSM

 

19

 

kA

Tj=25°C, VR=0,8VRRM, tp=10ms

I square t

I2t

 

1.8×103

 

kA2s

10 msec

Peak on-state voltage

VFM

 

1.6

 

V

IFM = 1500 A; Tj = 150 oC

Reverse Recovery Current (4)

IRM(REC)

 

-

 

A

IFM = 1000 A; dIF/dt = 10 A/ms,

Tj = 150 oC

Reverse Recovery Charge (4)

Qrr

 

-

 

mC

 

Reverse Recovery Time (4)

tRR

 

-

 

ms

 

  * For guaranteed maximum values, contact factory


THERMAL AND MECHANICAL CHARACTERISTICS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+150

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

20

 

K/kW

Double side cooled

Thermal resistance - case to sink

RQ (c-s)

 

5

 

K/kW

Double side cooled

Thermal resistance - junction to sink

RQ (j-s)

 

-

 

K/kW

Double side cooled

Mounting force

P

20

24

 

kN

 

Weight

W

 

 

0.46

Kg

about


* Mounting surfaces smooth, flat and greased


CASE OUTLINE AND DIMENSIONS.

High Pressure High Power Rectifier Diode 6000V


Sym

A

B

C

D

H

mm

75

47

66

3.5×3

26±1


  


Product Categories : Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode)

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