Home > Products > Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode) > Good hermetic closure CB35L/N Press Fit Diode
  • Good hermetic closure CB35L/N Press Fit Diode
  • Good hermetic closure CB35L/N Press Fit Diode
  • Good hermetic closure CB35L/N Press Fit Diode
  • Good hermetic closure CB35L/N Press Fit Diode
  • Good hermetic closure CB35L/N Press Fit Diode

Good hermetic closure CB35L/N Press Fit Diode

  • $0.32
    1000-9999
    Piece/Pieces
  • $0.26
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-CB35L/N

BrandYZPST

Supply TypeOriginal Manufacturer, Retailer

Reference MaterialsDatasheet, Photo

Place Of OriginChina

SpeciesRectifier Diode

Package TypeSurface Mount

GearNot Applicable

Q Value At Different Vr And FNot Applicable

Power-MaximumNot Applicable

IF (AV)35A

IFSM400A

VFM1.1V

VRRM25-29V

IRRM1uA

IRRM2800uA

Rthic≤0 . 8℃/W

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express

Place of OriginCHINA

Supply Ability10000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:

 Press Fit Diode YZPST-CB35L/N  P 
FEATURES:

a Adopt a vacuum solder techniques with one-step soldering Technology. High soldering Lug welds temperature , Good consistency of Max.  Forward voltage Drop and Low △VF Dispersion coefficient.

b   EPoxy molded packages. Good hermetic closure, and strong resistance against bending , tension , humidity.

c  o/J  CHIP.  Good  consistency  of  Forward  and  Reverse  feature,  effective  utilization  of  silicon  area ,  small  high temperature leaking currency and good capacity of reverse surge current.

d  Apply to each field Automotive Rectifiers Extensively. e  Replacement of LUCAS Type diodes.

YZPST-CB35L N

 

      TYPE
CHARACTERISTIC SYM UNIT YZPST-CB35MP/N
Max. Average Forward current (Tc 17o℃)      
IF (AV) A 35
Max.  peak, one-cycle forward , non -repetitive surge current IFSM   400
A
Max.  Forward voltage Drop (IF  VFM V 1.1
 100A, Tc = 25℃)
Max.  Repetitive Reverse peak voltage      
VRRM V 25-29
Maximum reverse leakage current (VR = VRRM , TC = 25℃) IRRM1 uA  
1
Maximum reverse leakage current (VR = VRRM,TC 175℃) IRRM2 uA  
800
△VF Disperse coefficient (max-average)/ average  15%
Max. Thermal ResistanceJunction to case Rthic ℃/W ≤0 . 8
storage temperature Range Tstg -40200
Junction Temperature Tjm 200

 

Product Categories : Semiconductor Disc Devices(Capsule Type) > Rectifier Diode(Standard Diode)

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