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Reverse conducting thyristor 2000V

  • $360
    ≥20
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
20 Piece/Pieces
Transportation:
Ocean,Air
Port:
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  • Product Description
Overview
Product Attributes

Model No.YZPST-KT40BT-5STR03T2040

BrandYZPST

TypeIntrinsic Semiconductor

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

REVERSE CONDUCTING THYRISTORS

YZPST-KT40BT-5STR03T2040

Features:
. Integrated freewheeling diode
. Optimized for low dynamic losses

Blocking - Off State        

VRRM (1)

VDRM (1)

VRSM (1)

  2000

2000

2100


       VRRM = Repetitive peak reverse voltage

       VDRM = Repetitive peak off state voltage

       VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

10 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

     50Hz/60zHz sinusoidal waveform over the

     temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.


Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)M

IF(AV)M

360

223

A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

566

351

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

IFSM

  

5000

3500

A

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

125x103

61x103

A2s

8.3 msec

Latching current

IL

500

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

100

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

VFM

2.61

3.42

V

ITM = 1000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

-

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

400

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

-

W

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

25

A

Gate current required to trigger all units

IGT

400

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

2.5

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

2

V

Dynamic

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

1.0

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

Turn-off time (with VR = -5 V)

tq

40

-

ms

ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us

Reverse recovery current

Irm

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+120

oC

Thermal resistance - junction to case

RQ (j-c)

RQ (j-c)D

55

140

88

165

K/kW

Double sided cooled

Single sided cooled

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

10

20

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

8

12

-

kN

Weight

W

-

Kg

* Mounting surfaces smooth, flat and greased

     Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data

REVERSE CONDUCTING THYRISTORS

Sym

A

B

C

D

H

mm

59

34

53

3.5×3

20±1




Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)

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