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1000V Power MOSFET Module N-Channel Enhancement Mode
Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier VDSS = 1000V ID25 = 38A RDS(on) ≤ 210mΩ trr ≤ 300ns Features International Standard Package Low Intrinsic Gate Resistance
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.