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High Power Density 900V MOSFET module factory

  • $27.5
    10-49
    Bag/Bags
  • $23
    ≥50
    Bag/Bags
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
10 Bag/Bags
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-IXFN40N90P

BrandYZPST

VGS±30V

VDSS900V 

ID2533A

PD695W

VGS(th)6.5V(max.)

Supply Ability & Additional Information

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Power MOSFET

: YZPST-IXFN40N90P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

YZPST-IXFN40N90P-1(1)
Product parameters
Symbol
Test Conditions
Maximum Ratings
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
VDSS
TJ = 25°C to 150°C
900V 
VGS
Continuous
±30V
ID25
TC = 25°C
33A
PD
TC = 25°C
695W
VGS(th)
VDS = VGS, ID = 1mA
6.5V(max.)
IDSS
VGS = 0V TJ= 125°C
3mA
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
14pF
Qg(on)
VGS = 10V, VDS = 0.5 • VDSS, ID = 20A
230nC
TJ
﹣55℃~150℃
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC

Features

International standard package

miniBLOC, with Aluminium nitride

isolation

Avalanche Rated

Low package inductance

Fast intrinsic diode

Applications

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor drives

Robotics and servo controls

Advantages

Low gate drive requirement

High power density

YZPST-IXFN40N90P-2YZPST-IXFN40N90P-3




Product Categories : Semiconductor Module Devices > Thyristor Module

Home > Products > Semiconductor Module Devices > Thyristor Module > High Power Density 900V MOSFET module factory
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