Equiv to MOSFET module IXFN38N100Q2 1000V

Power MOSFET

: YZPST-IXFN38N100Q2

N-Channel Enhancement Mode

Avalanche Rated, Low Qg , Low Intrinsic R g

High dV/dt, Low trr

Product parameters

Symbol	Test Conditions	Maximum Ratings
FET Type		N-Channel
Technology		MOSFET (Metal Oxide)
VDSS	TJ = 25°C to 150°C	1000V
VGS	Continuous	±30V
ID25	TC = 25°C	38A
EAR	TC = 25°C	60mJ
PD	TC = 25°C	890W
VGS(th)	VDS = VGS, ID = 8mA	5.0V(max.)
IDSS	VDS = VDSS TJ= 25°C	50mA
Ciss	VGS = 0 V, VDS = 25 V, f = 1 MHz	7200pF
QG(on)	VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25	250nC
TJ		﹣55℃~150℃
Mounting Type		Chassis Mount
Supplier Device Package		SOT-227B
Package / Case		SOT-227-4, miniBLOC

Features

• Double metal process for low

gate resistance

• miniBLOC, with Aluminium nitride

 isolation

• Unclamped Inductive Switching (UIS)

 rated

• Low package inductance
• Fast intrinsic Rectifier

Applications

• DC-DC converters
• Switched-mode and resonant-mode

power supplies

• DC choppers
• Pulse generators

Advantages

• Easy to mount
• Space savings
• High power density