Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > SCR transistor power transistor price with great price

Contact Supplier

Mr. John chang

Leave a message

Contact Now

SCR transistor power transistor price with great price

Get Latest Price

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

Transportation:

Ocean,Air

Port:

Shanghai

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-1690-TO-247S

Brand: YZPST

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

PST1690 Series 90A SCRs

YZPST-1690-TO-247S

DESCRIPTION:

PST1690 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle, power charger, T-tools etc

SCR transistor power transistor price with great price

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40-150	℃
Operating junction temperature range	Tj	-40-125	℃
Repetitive peak off-state voltage	VDRM	1600	V
Repetitive peak reverse voltage	VRRM	1600	V
Average on-state current (TC=80℃)	IT(AV)	56	A
RMS on-state current(TC=80℃)	IT(RMS)	90	A
Non repetitive surge peak on-state current (tp=10ms)	ITSM	1250	A
I2t value for fusing (tp=10ms)	I2t	7800	A2s
Critical rate of rise of on-state current (IG=2×IGT)	dI/dt	150	A/μs
Peak gate current	IGM	10	A
Peak gate power	PGM	20	W
Average gate power dissipation(Tj=125℃)	PG(AV)	2	W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Symbol	Test Condition	Value			Unit
Symbol	Test Condition	MIN.	TYP.	MAX.	Unit
IGT	VD=12V RL=30Ω	10	-	80	mA
VGT	VD=12V RL=30Ω	-	-	1.5	V
VGD	VD=VDRM Tj=125℃	0.25	-	-	V
IL	IG=1.2 IGT	-	-	200	mA
IH	IT=1A	-	-	150	mA
dV/dt	VD=2/3VDRM Tj=125℃ Gate Open	1000	-	-	V/μs