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Surface mountable package 100-8 1A SCRs

$0.026

1000-9999
Piece/Pieces
$0.019

≥10000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-100-8

Brand: YZPST

Application: Not Applicable

Supply Type: Original Manufacturer, Odm, Agency, Retailer

Reference Materials: Datasheet, Photo, Eda/Cad Models

Package Type: Surface Mount

Installation Method: Not Applicable

FET Function: Not Applicable

Configuration: Not Applicable

Tstg: -40 ~150°C

Tj: -40 ~125°C

VDRM: 900V

VRRM: 900V

IT(RMS): 1.0A

ITSM: 12A

I2t: 0.72A2S

Supply Ability & Additional Information

Packaging: For more detailed product information and transaction information, please contact our email address : info@yzpst.com

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 10000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: For more detailed product information and transaction information, please contact our email address : info@yzpst.com

100-8 1A SCRs

FEATURES

Sensitive gate

Direct triggering from low power drivers and logic ICs

Surface mountable package

APPLICATIONS

Ground Fault Circuit Interrupters (GFCI)

General purpose switching and phase control

Ignition circuits, CDI

Motor control - e.g. small kitchen appliances

ABSOLUTE MAXIMUM RATINGS
Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~ 150	℃
Operating junction temperature range	Tj	-40~ 125	℃
repetitive surge peak Off-state voltage	VDRM	900	V
repetitive peak reverse voltage	VRRM	900	V
RMS on-state current	IT(RMS)	1.0	A
Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz,t=10ms/60Hz,8 3ms)	ITSM	12	A
I2t value for fusing (tp= 10ms)	I2t	0.72	A2S
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns)	di/dt	50	A/μS
Peak gate current	IGM	0.5	A
Average gate power dissipation	PG(AV)	0.1	W
Maximum device temperature for solderingPurposes (for 10 seconds maximum)	TL	260	℃
ESD level	HBM	Class 3 (4000-16000V)
Humidity sensitive level	MSL	Three-level (30℃,60%RH,168h)

Thermal Resistances
Symbol	Parameter		Value	Unit
		TO-92	70
Rth(j-c)	Junction to tab (DC)	SOT-223	25	℃/W

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol	Test Condition	Value			Unit
Symbol	Test Condition	MlV	TYP	MAX	Unit
IGT	V = 12V R = 140Ω	20	40	120	4A
VGT	V = 12V R = 140Ω	-	-	1 0	V
VGD	VD=VDRM Tj=125℃ R= 1KΩ	0.2	-	-	V
IL	IG= 1.2IGT	-	-	6	mA
IH	IT=50mA	-	-	5	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	50	-	-	V/ μs