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25A YZPST-S2535 SCRs series is suitable to fit all modes of control

$0.48

1000-4999
Piece/Pieces
$0.32

≥5000
Piece/Pieces

option:

IT(RMS):40A
VDRM:1200V
VRRM:1200V
IGT:35mA
Tstg:-40 ~150℃
Tj:-40~125℃

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-S2535-12C

Brand: YZPST

Place Of Origin: China

IT(RMS): 40A

VDRM: 1200V

VRRM: 1200V

IGT: 35mA

Tstg: -40 ~150℃

Tj: -40~125℃

VDSM: VDRM +100V

VRSM: VRRM +100V

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land

Place of Origin: CHINA

Supply Ability: 10000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-S2535 Series 25A SCRs

25A YZPST-S2535 SCRs series is suitable to fit all modes of control

DESCRIPTION:

Glass passivated thyristors in a plastic envelope, The YZPST-S2535 SCRs series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition, Softstart AC motor control and voltage regulation circuits…

Symbol	Value	Unit
IT(RMS)	40	A
VDRM VRRM	1200	V
IGT	35	mA

ABSOLUTE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~150	℃
Operating junction temperature range	Tj	-40~125	℃
Repetitive peak off-state voltage (T =25℃)	VDRM	1200	V
Repetitive peak reverse voltage (T =25℃)	VRRM	1200	V
Non repetitive surge peak Off-state voltage	VDSM	VDRM +100	V
Non repetitive peak reverse voltage	VRSM	VRRM +100	V
RMS on-state current (T =100℃)	IT(RMS)	40	A
Non repetitive surge peak on-state current	ITSM	350	A
Average on-state current (180° conduction angle)	IT(AV)	25	A
I2t value for fusing (tp=10ms)	I2t	450	A2S
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns)	dI/dt	150	A/μS
Peak gate current	IGM	4	A
Average gate power dissipation	PG(AV)	1	W

Symbol	Test Condition		Value	Unit
IGT	V =12V R =140Ω	MAX.	35	mA
VGT	V =12V R =140Ω	MAX.	1.3	V
VGD	VD=VDRM Tj=125℃ R=1KΩ	MIN.	0.2	V
IL	IG=1.2IGT	MAX.	75	mA
IH	IT=50mA	MAX.	50	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	MIN.	500	V/μs